Aims::
The potentiality of Multiple Quantum Well (MQW) Impacts Avalanche Transit
Time (IMPATT) diodes based on Si~3C-SiC heterostructures as possible terahertz radiators have
been explored in this paper.
Objective::
The static, high frequency and noise performance of MQW devices operating at 94,
140, and 220 GHz atmospheric window frequencies, as well as 0.30 and 0.50 THz frequency
bands, have been studied in this paper.
Methods:
The simulation methods based on a Self-Consistent Quantum Drift-Diffusion (SCQDD)
model developed by the authors have been used for the above-mentioned studies.
Results:
Thus the noise performance of MQW DDRs will be obviously better as compared to the
flat Si DDRs operating at different mm-wave and THz frequencies.
Conclusion::
Simulation results show that Si~3C-SiC MQW IMPATT sources are capable of
providing considerably higher RF power output with the significantly lower noise level at both
millimeter-wave (mm-wave) and terahertz (THz) frequency bands as compared to conventional
flat Si IMPATT sources.
Photoelectrochemistry and Drift–Diffusion Simulations in a Polythiophene Film Interfaced with an Electrolyte
