Transition from Semimetal to Semiconductor in ZrTe2 Induced by Se Substitution

ACS Nano ◽  
2019 ◽  
Vol 14 (1) ◽  
pp. 835-841 ◽  
Author(s):  
Zahir Muhammad ◽  
Bo Zhang ◽  
Haifeng Lv ◽  
Huan Shan ◽  
Zia ur Rehman ◽  
...  
Keyword(s):  

2018 ◽  
Vol 30 (45) ◽  
pp. 455703 ◽  
Author(s):  
E Paris ◽  
Y Mizuguchi ◽  
T Wakita ◽  
K Terashima ◽  
T Yokoya ◽  
...  


Author(s):  
Nataliya N. Karaush-Karmazin ◽  
Gleb V. Baryshnikov ◽  
Artem V. Kuklin ◽  
Diana I. Saykova ◽  
Hans Ågren ◽  
...  

The charge transfer mobility of hetero[8]circulenes tends to increase with O/NH or S/Se substitution and benzoannelation.



1985 ◽  
Vol 38 (12) ◽  
pp. 1745 ◽  
Author(s):  
IG Dance

Cadmium-113 n.m.r . spectra at 66.6 MHz of various mixtures of the six cage compounds [X4M10( SPh )16]4- (1; X = S, Se; M = Zn, Cd ) and [M4( SPh )10]2- (M = Zn, Cd ), have revealed the exchange reactions of M and of X which occur within the different structural elements of (1), namely the triply bridging chalcogenide ligands X, the inner metal atoms Mi, and the outer metal atoms Mo. At laboratory temperature the exchange time scales range from days (X) through hours (Mi) to seconds (Mo and SPh ), according to the extent of atomic connection to each of these structural components of the aggregate. Metal exchange does not always follow random statistics, with biases towards equilibrium association of the same metal. The M- and X-substituted products, with lower symmetry than the high-symmetry precursors, reveal the mutual influences of the various structural elements on Cd chemical shift: S → Se substitution causes changes ( ΔδCd ) of -37 ppm at one bond, -3 ppm and -1.5 ppm at three bonds, and + 1 ppm five bonds distant; Cd → Zn substitution causes δCd to change by + 13 ppm and + 5 ppm at a connection of two bonds and by -3 ppm over four bonds. These effects of adjacent Cd → Zn substitution on δCd provide well defined models in support of the hypothesis of similar effects in the Cd n.m.r . spectra of mixed Zn, Cd metallothionein proteins.



2007 ◽  
Vol 68 (10) ◽  
pp. 1881-1884 ◽  
Author(s):  
I.P. Studenyak ◽  
O.P. Kokhan ◽  
M. Kranjčec ◽  
V.V. Bilanchuk ◽  
V.V. Panko


2017 ◽  
Vol 86 (10) ◽  
pp. 104712 ◽  
Author(s):  
Yosuke Goto ◽  
Ryota Sogabe ◽  
Yoshikazu Mizuguchi


2012 ◽  
Vol 47 (7) ◽  
pp. 1670-1673 ◽  
Author(s):  
Bo Duan ◽  
Pengcheng Zhai ◽  
Lisheng Liu ◽  
Qingjie Zhang


2021 ◽  
Vol 54 (26) ◽  
pp. 265302
Author(s):  
Kui Yin ◽  
Tao Huang ◽  
Hong-Yu Wu ◽  
Yuan Si ◽  
Ji-Chun Lian ◽  
...  


2012 ◽  
Vol 193 ◽  
pp. 8-12 ◽  
Author(s):  
Bo Duan ◽  
Pengcheng Zhai ◽  
Lisheng Liu ◽  
Qingjie Zhang ◽  
Xuefeng Ruan


2002 ◽  
Vol 312-313 ◽  
pp. 365-366
Author(s):  
Makoto Shirakawa ◽  
Masahiro Ona ◽  
Yukihiro Sakai ◽  
Akira Ochiai


Author(s):  
Su-Qin Zhou ◽  
Qi-Ying Xia ◽  
Meng Liang ◽  
Xue-Hai Ju

The relationship between molecular geometries, crystal structures and charge mobilities of hexathiapentacene (HTP) and its three derivatives (2Se-HTP, 4Se-HTP, 6Se-HTP) were studied with density functional theory combined with hopping mechanism in the molecular and crystal level. The effect of Se substitution on the charge mobility was discussed. The calculated results showed that the derivatives exhibit good planarity and the molecular geometries have little variation during the charge transfer process. The electron mobility is 1.20 cm2 V?1 S?1 for HTP and 2.30 cm2 V?1 S?1 for 6Se-HTP, which are much larger than the corresponding hole ones, indicating that HTP and 6Se-HTP are good candidates for n-type organic semiconductor. However, 2Se-HTP and 4Se-HTP have comparable hole and electron mobilities and are suitable for ambipolar semiconductor.



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