Effect of Nitrogen Impurity on Diamond Crystal Growth Processes

2010 ◽  
Vol 10 (7) ◽  
pp. 3169-3175 ◽  
Author(s):  
Yuri N. Palyanov ◽  
Yuri M. Borzdov ◽  
Alexander F. Khokhryakov ◽  
Igor N. Kupriyanov ◽  
Alexander G. Sokol
Keyword(s):  
Crystal Growth ◽  
Diamond Crystal ◽  
Growth Processes ◽  
Nitrogen Impurity

Modeling and bulk crystal growth processes: What is to be learned?

2010 ◽  
Author(s):  
Jeffrey J. Derby ◽  
W. Wang ◽  
Katsuo Tsukamoto ◽  
Di Wu
Keyword(s):  
Crystal Growth ◽  
Bulk Crystal ◽  
Growth Processes ◽  
Bulk Crystal Growth

On the Mechanism of Cathodic Crystal Growth Processes

1961 ◽  
Vol 108 (5) ◽  
pp. 449 ◽  
Author(s):  
B. C. Banerjee ◽  
P. L. Walker
Keyword(s):  
Crystal Growth ◽  
Growth Processes

Optimization of 150 mm 4H SiC Substrate Crystal Quality

2018 ◽  
Vol 924 ◽  
pp. 11-14 ◽  
Author(s):  
Ian Manning ◽  
Gil Yong Chung ◽  
Edward Sanchez ◽  
Yu Yang ◽  
Jian Qiu Guo ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Marked Reduction ◽  
Stacking Faults ◽  
Continuous Optimization ◽  
Stacking Fault ◽  
Thermal Parameters ◽  
Crystal Quality ◽  
Growth Processes ◽  
Fault Density

Continuous optimization of bulk 4H SiC PVT crystal growth processes has yielded an improvement in 150 mm wafer shape, as well as a marked reduction in stacking fault density. Mean wafer bow and warp decreased by 26% and 14%, respectively, while stacking faults were nearly eliminated from wafers produced using the refined process. These quality enhancements corresponded to an adjustment to key thermal parameters predicted to control intrinsic crystal stresses, and a reduction in crystal dome curvature.

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