Effect of Nitrogen Impurity on Diamond Crystal Growth Processes

2010 ◽  
Vol 10 (7) ◽  
pp. 3169-3175 ◽  
Author(s):  
Yuri N. Palyanov ◽  
Yuri M. Borzdov ◽  
Alexander F. Khokhryakov ◽  
Igor N. Kupriyanov ◽  
Alexander G. Sokol
2010 ◽  
Author(s):  
Jeffrey J. Derby ◽  
W. Wang ◽  
Katsuo Tsukamoto ◽  
Di Wu

1961 ◽  
Vol 108 (5) ◽  
pp. 449 ◽  
Author(s):  
B. C. Banerjee ◽  
P. L. Walker

2018 ◽  
Vol 924 ◽  
pp. 11-14 ◽  
Author(s):  
Ian Manning ◽  
Gil Yong Chung ◽  
Edward Sanchez ◽  
Yu Yang ◽  
Jian Qiu Guo ◽  
...  

Continuous optimization of bulk 4H SiC PVT crystal growth processes has yielded an improvement in 150 mm wafer shape, as well as a marked reduction in stacking fault density. Mean wafer bow and warp decreased by 26% and 14%, respectively, while stacking faults were nearly eliminated from wafers produced using the refined process. These quality enhancements corresponded to an adjustment to key thermal parameters predicted to control intrinsic crystal stresses, and a reduction in crystal dome curvature.


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