Kinetics of the chlorination of mercuric chloride in acetone at a solid surface

1968 ◽  
Vol 72 (6) ◽  
pp. 2154-2160
Author(s):  
L. Hellemans ◽  
C. Jonckheere
Keyword(s):  
Solid Surface ◽  
Mercuric Chloride ◽  
Kinetics Of

Kinetics of Particle Transport to a Solid Surface from an Impinging Jet under Surface and External Force Fields

1998 ◽  
Vol 208 (1) ◽  
pp. 226-240 ◽  
Author(s):  
Chun Yang ◽  
Tadeusz Dabros ◽  
Dongqing Li ◽  
Jan Czarnecki ◽  
Jacob H. Masliyah
Keyword(s):  
External Force ◽  
Solid Surface ◽  
Particle Transport ◽  
Force Fields ◽  
Impinging Jet ◽  
Kinetics Of

Spreading kinetics of a drop on a rough solid surface

1983 ◽  
Vol 92 (2) ◽  
pp. 338-349 ◽  
Author(s):  
P Neogi ◽  
Clarence A Miller
Keyword(s):  
Solid Surface ◽  
Kinetics Of

Kinetics of Detachment of Homopolymers from a Solid Surface

1995 ◽  
Vol 74 (13) ◽  
pp. 2503-2506 ◽  
Author(s):  
Yongmei Wang ◽  
Raj Rajagopalan ◽  
Wayne L. Mattice
Keyword(s):  
Solid Surface ◽  
Kinetics Of

Reaction Kinetics of Atomic chlorine on Si(100)2×1

1992 ◽  
Vol 280 ◽  
Author(s):  
Kazuhiro Karahashi ◽  
Jiro Matsuo ◽  
Kei Horiuchi
Keyword(s):  
Activation Energy ◽  
Transition State ◽  
Solid Surface ◽  
Surface Reaction ◽  
Thermal Excitation ◽  
Silicon Substrates ◽  
Chlorine Atoms ◽  
Substrate Temperatures ◽  
Kinetics Of ◽  
Atomic Chlorine

ABSTRACTThe interaction of atomic chlorine with Si(100)2×1 surfaces was studied by using chlorine atom beams. The etching reaction of silicon substrates has been observed when chlorine atoms impinged on the chlorinated surface, at substrate temperatures below 600°C. The major desorption product is SiCl2. Studies of the temperature dependence of the reaction showed that the activation energy are 0.08 eV at 0.4 ML and 0.2 eV at 0.8 ML. These extremely low activation energies suggest that the surface reaction is mainly driven by the internal energy of incident atomic chlorine instead of thermal excitation from Si(100) solid surface. Therefore chlorine atoms enter the transition state without equilibrating at the surface prior to the reaction. The reaction strongly depends on the chlorine coverage on the surface. The reaction occurred above 0.3 ML. The etching probability of the surface reached a maximum at 0.4 ML, and decreased with increasing coverage.

O–Cu(001): I. BINDING THE SIGNATURES OF LEED, STM AND PES IN A BOND-FORMING WAY

2001 ◽  
Vol 08 (03n04) ◽  
pp. 367-402 ◽  
Author(s):  
CHANG Q. SUN
Keyword(s):  
Hydrogen Bond ◽  
Solid Surface ◽  
Kinetics Of Oxidation ◽  
Bond Forming ◽  
Chemisorbed Oxygen ◽  
Valence Electrons ◽  
Specific Oxidation ◽  
Kinetics Of ◽  
Oxidation Surface ◽  
Bonding Kinetics

This work consists of two sequential parts, which review the advances in uncovering the capacity of VLEED, STM and PES in revealing the nature and kinetics of oxidation bonding and its consequences for the behavior of atoms and valence electrons at a surface; and in quantifying the O–Cu(001) bonding kinetics. The first part describes the model in terms of bond making and its effect on the valence DOS and on the surface potential barrier (SPB) for surfaces with chemisorbed oxygen. One can replace the hydrogen in a H 2 O molecule with an arbitrary less electronegative element and extend the M 2 O to a solid surface with Goldschmidt contraction of the bond length, which formulates a specific oxidation surface with identification of atomic valences and their correpondence to the STM and PES signatures. As consequences of bond making, oxygen derives foou additional DOS features in the valence band and above, i.e. O–M bonding (~ -5 eV), oxygen nonbounding lone pairs (~ - 2 eV), holes (≤ EF ), and antibonding metal dipoles (≥ EF ), in addition to the hydrogen-bond-like formation. The evolution of O -1 to O -2 transforms the CuO 2 pairing off-centered pyramid in the c(2× 2)-2 O -1 into the CU 3 O 2 pairing tetrahedron in the [Formula: see text] phase on the Cu(001) surface. The new decoding technique has enabled the model to be justified and hence the capacity of VLEED, PES and STM to be fully uncovered in determining simultaneously the bond geometry, the SPB, the valence DOS, and their interdependence.

Properties of adsorption microlayers and the kinetics of bubble growth on a solid surface

1983 ◽  
Vol 45 (1) ◽  
pp. 785-788
Author(s):  
V. F. Stepanchuk ◽  
M. L. Guris
Keyword(s):  
Solid Surface ◽  
Bubble Growth ◽  
Kinetics Of

Kinetics of adsorption and recombination of hydrogen atoms at a solid surface

1998 ◽  
Vol 24 (3) ◽  
pp. 176-177
Author(s):  
V. F. Kharlamov ◽  
K. M. Anufriev ◽  
E. P. Krutovskii ◽  
Yu. V. Mosin ◽  
E. A. Zlotkin ◽  
...  
Keyword(s):  
Solid Surface ◽  
Hydrogen Atoms ◽  
Kinetics Of Adsorption ◽  
Kinetics Of

Wetting Kinetics of a Thin Film on a Solid Surface Pinned to a Slot†

2005 ◽  
Vol 44 (5) ◽  
pp. 1204-1208 ◽  
Author(s):  
Xianzhong Zhang ◽  
S. Saritha ◽  
P. Neogi
Keyword(s):  
Thin Film ◽  
Solid Surface ◽  
Wetting Kinetics ◽  
Kinetics Of
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