Wetting Kinetics of a Thin Film on a Solid Surface Pinned to a Slot†

2005 ◽  
Vol 44 (5) ◽  
pp. 1204-1208 ◽  
Author(s):  
Xianzhong Zhang ◽  
S. Saritha ◽  
P. Neogi
1994 ◽  
Vol 3 (4) ◽  
pp. 096369359400300
Author(s):  
G. Carotenuto ◽  
A. Gallo ◽  
L. Nicolais

The wetting kinetics of a solid surface by a molten metal decrease with increase of its roughness. The topography of the growing copper coating, produced on carbon fiber surface by electroplating from a sulphat bath, has been studied by scanning electron microscopy. The smoothes surface is produced after 200÷300 milliampere-hour of plating.


2001 ◽  
Vol 428 ◽  
pp. 171-183 ◽  
Author(s):  
P. NEOGI

The wetting kinetics of a drop on a solid surface is measured by observing the movement of the contact line, which is often seen to be unstable, showing a scalloped profile. Many factors have been cited, which, although they can cause instability, can also be eliminated from the experiments, but still the instabilities appear. The basic shape of a spreading drop has a large curvature localized in the vicinity of the contact line as determined by microscopy. It is shown here using linear stability analysis that this curvature can destabilize the contact line region. When the drop profile is disturbed from a basic thickness of h to h + h′, there are two contributions from h′ in the form of added Laplace pressure. One of these is commonly accounted for in the stability analyses. The other is not, and occurs only if the basic shape has a curvature, and the drop has a large curvature near the apparent dynamic contact line, but only for a wetting liquid. This is why instability is not reported in the case of spreading of drops of non-wetting liquids. It also explains why instability gives rise to the changed spreading kinetics of drops that are sometimes reported in the literature, and suggests that as larger curvatures are expected in forced spreading those cases are probably accompanied quite frequently by unstable contact lines.


2007 ◽  
Vol 19 (11) ◽  
pp. 112104 ◽  
Author(s):  
S. Saritha ◽  
P. Neogi

Author(s):  
M. Park ◽  
S.J. Krause ◽  
S.R. Wilson

Cu alloying in Al interconnection lines on semiconductor chips improves their resistance to electromigration and hillock growth. Excess Cu in Al can result in the formation of Cu-rich Al2Cu (θ) precipitates. These precipitates can significantly increase corrosion susceptibility due to the galvanic action between the θ-phase and the adjacent Cu-depleted matrix. The size and distribution of the θ-phase are also closely related to the film susceptibility to electromigration voiding. Thus, an important issue is the precipitation phenomena which occur during thermal device processing steps. In bulk alloys, it was found that the θ precipitates can grow via the grain boundary “collector plate mechanism” at rates far greater than allowed by volume diffusion. In a thin film, however, one might expect that the growth rate of a θ precipitate might be altered by interfacial diffusion. In this work, we report on the growth (lengthening) kinetics of the θ-phase in Al-Cu thin films as examined by in-situ isothermal aging in transmission electron microscopy (TEM).


2000 ◽  
Vol 650 ◽  
Author(s):  
Lance L. Snead ◽  
Martin Balden

ABSTRACTDensification and crystallization kinetics of bulk SiC amorphized by neutron irradiation is studied. The temperature of crystallization onset of this highly pure, fully amorphous bulk SiC was found to be between 875-885°C and crystallization is nearly complete by 950°C. In-situ TEM imaging confirms the onset of crystallization, though thin-film effects apparently alter the kinetics of crystallization above this temperature. It requires >1125°C for complete crystallization of the TEM foil. Annealing at temperatures between the irradiation and crystallization onset temperature is seen to cause significant densification attributed to a relaxation, or reordering, of the as-amorphized structure.


1996 ◽  
Vol 118 (3) ◽  
pp. 702-708 ◽  
Author(s):  
H. K. Park ◽  
X. Zhang ◽  
C. P. Grigoropoulos ◽  
C. C. Poon ◽  
A. C. Tam

The thermodynamics of the rapid vaporization of a liquid on a solid surface heated by an excimer laser pulse is studied experimentally. The transient temperature field is measured by monitoring the photothermal reflectance of an embedded thin film in nanosecond time resolution. The transient reflectivity is calibrated by considering a temperature gradient across the sample based on the static measurements of the thin film optical properties at elevated temperatures. The dynamics of bubble nucleation, growth, and collapse is detected by probing the optical specular reflectance. The metastability behavior of the liquid and the criterion for the onset of liquid–vapor phase transition in nanosecond time scale are obtained quantitatively for the first time.


1988 ◽  
Vol 119 ◽  
Author(s):  
Hung-Yu Liu ◽  
Peng-Heng Chang ◽  
Jim Bohlman ◽  
Hun-Lian Tsai

AbstractThe interaction of Al and W in the Si/SiO2/W-Ti/Al thin film system is studied quantitatively by glancing angle x-ray diffraction. The formation of Al-W compounds due to annealing is monitored by the variation of the integrated intensity from a few x-ray diffraction peaks of the corresponding compounds. The annealing was conducted at 400°C, 450°C and 500°C from 1 hour to 300 hours. The kinetics of compound formation is determined using x-ray diffraction data and verified by TEM observations. We will also show the correlation of the compound formation to the change of the electrical properties of these films.


1998 ◽  
Vol 208 (1) ◽  
pp. 226-240 ◽  
Author(s):  
Chun Yang ◽  
Tadeusz Dabros ◽  
Dongqing Li ◽  
Jan Czarnecki ◽  
Jacob H. Masliyah

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