Wetting Kinetics of a Thin Film on a Solid Surface Pinned to a Slot†

2005 ◽  
Vol 44 (5) ◽  
pp. 1204-1208 ◽  
Author(s):  
Xianzhong Zhang ◽  
S. Saritha ◽  
P. Neogi
Keyword(s):  
Thin Film ◽  
Solid Surface ◽  
Wetting Kinetics ◽  
Kinetics Of

scholarly journals Wettability of Copper Coated Carbon Fibers

1994 ◽  
Vol 3 (4) ◽  
pp. 096369359400300
Author(s):  
G. Carotenuto ◽  
A. Gallo ◽  
L. Nicolais
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Carbon Fiber ◽  
Carbon Fibers ◽  
Solid Surface ◽  
Fiber Surface ◽  
Wetting Kinetics ◽  
Coated Carbon ◽  
Kinetics Of ◽  
Scanning Electron

The wetting kinetics of a solid surface by a molten metal decrease with increase of its roughness. The topography of the growing copper coating, produced on carbon fiber surface by electroplating from a sulphat bath, has been studied by scanning electron microscopy. The smoothes surface is produced after 200÷300 milliampere-hour of plating.

Wetting Kinetics of a Drop on a Horizontal Solid Surface under a Viscous Ambient Liquid

1998 ◽  
Vol 37 (1) ◽  
pp. 66-70 ◽  
Author(s):  
Chin-Ming Lin ◽  
P. Neogi ◽  
R. M. Ybarra
Keyword(s):  
Solid Surface ◽  
Horizontal Solid Surface ◽  
Wetting Kinetics ◽  
Kinetics Of

Contact line instability in spontaneous spreading of a drop on a solid surface

2001 ◽  
Vol 428 ◽  
pp. 171-183 ◽  
Author(s):  
P. NEOGI
Keyword(s):  
Solid Surface ◽  
Contact Line ◽  
Dynamic Contact ◽  
Contact Lines ◽  
Large Curvature ◽  
Line Region ◽  
The Stability ◽  
Dynamic Contact Line ◽  
Wetting Kinetics ◽  
Kinetics Of

The wetting kinetics of a drop on a solid surface is measured by observing the movement of the contact line, which is often seen to be unstable, showing a scalloped profile. Many factors have been cited, which, although they can cause instability, can also be eliminated from the experiments, but still the instabilities appear. The basic shape of a spreading drop has a large curvature localized in the vicinity of the contact line as determined by microscopy. It is shown here using linear stability analysis that this curvature can destabilize the contact line region. When the drop profile is disturbed from a basic thickness of h to h + h′, there are two contributions from h′ in the form of added Laplace pressure. One of these is commonly accounted for in the stability analyses. The other is not, and occurs only if the basic shape has a curvature, and the drop has a large curvature near the apparent dynamic contact line, but only for a wetting liquid. This is why instability is not reported in the case of spreading of drops of non-wetting liquids. It also explains why instability gives rise to the changed spreading kinetics of drops that are sometimes reported in the literature, and suggests that as larger curvatures are expected in forced spreading those cases are probably accompanied quite frequently by unstable contact lines.

Wetting kinetics of a thin film evaporating in air

2007 ◽  
Vol 19 (11) ◽  
pp. 112104 ◽  
Author(s):  
S. Saritha ◽  
P. Neogi
Keyword(s):  
Thin Film ◽  
Wetting Kinetics ◽  
Kinetics Of

Growth kinetics of Al2Cu in an Al-1.5Cu thin film by in Situ TEM

1993 ◽  
Vol 51 ◽  
pp. 1172-1173
Author(s):  
M. Park ◽  
S.J. Krause ◽  
S.R. Wilson
Keyword(s):  
Thin Film ◽  
In Situ Tem ◽  
Collector Plate ◽  
Transmission Electron ◽  
Device Processing ◽  
Corrosion Susceptibility ◽  
Precipitation Phenomena ◽  
Semiconductor Chips ◽  
Kinetics Of

Cu alloying in Al interconnection lines on semiconductor chips improves their resistance to electromigration and hillock growth. Excess Cu in Al can result in the formation of Cu-rich Al2Cu (θ) precipitates. These precipitates can significantly increase corrosion susceptibility due to the galvanic action between the θ-phase and the adjacent Cu-depleted matrix. The size and distribution of the θ-phase are also closely related to the film susceptibility to electromigration voiding. Thus, an important issue is the precipitation phenomena which occur during thermal device processing steps. In bulk alloys, it was found that the θ precipitates can grow via the grain boundary “collector plate mechanism” at rates far greater than allowed by volume diffusion. In a thin film, however, one might expect that the growth rate of a θ precipitate might be altered by interfacial diffusion. In this work, we report on the growth (lengthening) kinetics of the θ-phase in Al-Cu thin films as examined by in-situ isothermal aging in transmission electron microscopy (TEM).

Reordering and Crystallization of Silicon Carbide Amorphized by Neutron Irradiation

2000 ◽  
Vol 650 ◽  
Author(s):  
Lance L. Snead ◽  
Martin Balden
Keyword(s):  
Thin Film ◽  
Silicon Carbide ◽  
Crystallization Kinetics ◽  
Neutron Irradiation ◽  
Onset Temperature ◽  
Kinetics Of Crystallization ◽  
Crystallization Onset Temperature ◽  
Crystallization Onset ◽  
Kinetics Of

ABSTRACTDensification and crystallization kinetics of bulk SiC amorphized by neutron irradiation is studied. The temperature of crystallization onset of this highly pure, fully amorphous bulk SiC was found to be between 875-885°C and crystallization is nearly complete by 950°C. In-situ TEM imaging confirms the onset of crystallization, though thin-film effects apparently alter the kinetics of crystallization above this temperature. It requires >1125°C for complete crystallization of the TEM foil. Annealing at temperatures between the irradiation and crystallization onset temperature is seen to cause significant densification attributed to a relaxation, or reordering, of the as-amorphized structure.

Transient Temperature During the Vaporization of Liquid on a Pulsed Laser-Heated Solid Surface

1996 ◽  
Vol 118 (3) ◽  
pp. 702-708 ◽  
Author(s):  
H. K. Park ◽  
X. Zhang ◽  
C. P. Grigoropoulos ◽  
C. C. Poon ◽  
A. C. Tam
Keyword(s):  
Thin Film ◽  
Solid Surface ◽  
Elevated Temperatures ◽  
Bubble Nucleation ◽  
Transient Temperature ◽  
Specular Reflectance ◽  
Transient Temperature Field ◽  
Excimer Laser Pulse ◽  
Nanosecond Time Resolution ◽  
Laser Heated

The thermodynamics of the rapid vaporization of a liquid on a solid surface heated by an excimer laser pulse is studied experimentally. The transient temperature field is measured by monitoring the photothermal reflectance of an embedded thin film in nanosecond time resolution. The transient reflectivity is calibrated by considering a temperature gradient across the sample based on the static measurements of the thin film optical properties at elevated temperatures. The dynamics of bubble nucleation, growth, and collapse is detected by probing the optical specular reflectance. The metastability behavior of the liquid and the criterion for the onset of liquid–vapor phase transition in nanosecond time scale are obtained quantitatively for the first time.

Quantitative Study of Al/W Interaction In Si/SiO2/W-Ti/Al Thin Film System

1988 ◽  
Vol 119 ◽  
Author(s):  
Hung-Yu Liu ◽  
Peng-Heng Chang ◽  
Jim Bohlman ◽  
Hun-Lian Tsai
Keyword(s):  
Thin Film ◽  
Film System ◽  
X Ray Diffraction ◽  
Compound Formation ◽  
X Ray ◽  
Thin Film System ◽  
Glancing Angle ◽  
Integrated Intensity ◽  
Al Thin Film ◽  
Kinetics Of

AbstractThe interaction of Al and W in the Si/SiO2/W-Ti/Al thin film system is studied quantitatively by glancing angle x-ray diffraction. The formation of Al-W compounds due to annealing is monitored by the variation of the integrated intensity from a few x-ray diffraction peaks of the corresponding compounds. The annealing was conducted at 400°C, 450°C and 500°C from 1 hour to 300 hours. The kinetics of compound formation is determined using x-ray diffraction data and verified by TEM observations. We will also show the correlation of the compound formation to the change of the electrical properties of these films.

Kinetics of Particle Transport to a Solid Surface from an Impinging Jet under Surface and External Force Fields

1998 ◽  
Vol 208 (1) ◽  
pp. 226-240 ◽  
Author(s):  
Chun Yang ◽  
Tadeusz Dabros ◽  
Dongqing Li ◽  
Jan Czarnecki ◽  
Jacob H. Masliyah
Keyword(s):  
External Force ◽  
Solid Surface ◽  
Particle Transport ◽  
Force Fields ◽  
Impinging Jet ◽  
Kinetics Of
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