Solution-Deposited Organic–Inorganic Hybrid Multilayer Gate Dielectrics. Design, Synthesis, Microstructures, and Electrical Properties with Thin-Film Transistors

2011 ◽  
Vol 133 (26) ◽  
pp. 10239-10250 ◽  
Author(s):  
Young-geun Ha ◽  
Jonathan D. Emery ◽  
Michael J. Bedzyk ◽  
Hakan Usta ◽  
Antonio Facchetti ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
Design Synthesis ◽  
Inorganic Hybrid

Role of ultrathin Al2O3 layer in organic/inorganic hybrid gate dielectrics for flexibility improvement of InGaZnO thin film transistors

2014 ◽  
Vol 15 (7) ◽  
pp. 1458-1464 ◽  
Author(s):  
Byeong-Ung Hwang ◽  
Do-Il Kim ◽  
Sung-Won Cho ◽  
Myeong-Gu Yun ◽  
Hak Jun Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
Al2o3 Layer ◽  
Inorganic Hybrid

Photo-Patternable Titanium Doped Organic–Inorganic Hybrid Gate Dielectric in Organic Thin Film Transistors

2008 ◽  
Vol 8 (9) ◽  
pp. 4679-4683 ◽  
Author(s):  
Chaun Gi Choi ◽  
Byeong-Soo Bae
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Uv Light ◽  
Sol Gel ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Inorganic Hybrid ◽  
Top Contact

Solution processable and photo-patternable titanium doped organic–inorganic hybrid material (MDT hybrimer) was prepared by simple sol–gel reaction for the gate dielectrics in organic thin film transistors (OTFTs). The MDT hybrimer is a typical nanocomposite which is fabricated via UV cross-linking of the nano-sized organo-oligosiloxanes. The photo-patternability of the MDT thin films was investigated using the UV light. The surface and electrical properties of MDT thin film were also investigated. The pentacene-based OTFT with MDT gate dielectrics was fabricated by using the top contact geometry. It is found that the OTFT with the MDT gate dielectrics showed a small hysteresis and good performance. The filed-effect mobility, threshold voltage, subthreshold slope and on/off current ratio of OTFT with MDT gate dielectric were 0.66 cm2V−1s−1, −14 V, 1.6 Vdec.−1, and 3 × 106, respectively.

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