Optically Detected Magnetic Resonance Study of CdS/HgS/CdS Quantum Dot Quantum Wells

1999 ◽  
Vol 103 (33) ◽  
pp. 6870-6875 ◽  
Author(s):  
E. Lifshitz ◽  
H. Porteanu ◽  
A. Glozman ◽  
H. Weller ◽  
M. Pflughoefft ◽  
...  
Keyword(s):  
Magnetic Resonance ◽  
Quantum Dot ◽  
Quantum Wells ◽  
Magnetic Resonance Study ◽  
Cds Quantum Dot ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected

ChemInform Abstract: Optically Detected Magnetic Resonance Study of CdS/HgS/CdS Quantum Dot Quantum Wells (QDQW).

ChemInform ◽  
2010 ◽  
Vol 30 (46) ◽  
pp. no-no
Author(s):  
E. Lifshitz ◽  
H. Porteanu ◽  
A. Glozman ◽  
H. Weller ◽  
M. Pflughoefft ◽  
...  
Keyword(s):  
Magnetic Resonance ◽  
Quantum Dot ◽  
Quantum Wells ◽  
Magnetic Resonance Study ◽  
Cds Quantum Dot ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected

Optically detected magnetic resonance study of SiC:Ti

1985 ◽  
Vol 32 (4) ◽  
pp. 2273-2284 ◽  
Author(s):  
K. M. Lee ◽  
Le Si Dang ◽  
G. D. Watkins ◽  
W. J. Choyke
Keyword(s):  
Magnetic Resonance ◽  
Magnetic Resonance Study ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected

Optically Detected Magnetic Resonance Study of 3D Arrayed Silicon Vacancies in SiC pn Diodes

2020 ◽  
Vol 1004 ◽  
pp. 343-348
Author(s):  
Yuichi Yamazaki ◽  
Yoji Chiba ◽  
Shin Ichiro Sato ◽  
Takahiro Makino ◽  
Naoto Yamada ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Magnetic Resonance ◽  
Three Dimensional ◽  
Magnetic Resonance Study ◽  
Mapping Analysis ◽  
Optically Detected Magnetic Resonance ◽  
Ion Proton ◽  
Pl Mapping ◽  
Optically Detected

We demonstrated optically detected magnetic resonance (ODMR) measurements using three-dimensional (3D) arrayed silicon vacancies (VSis) in in-plane SiC pn diodes. Proton beam writing successfully created 3D arrayed VSis using different ion (proton) energies. The results of PL mapping analysis indicate that the features of luminescent spot such as size and depth can be estimated by a Monte Carlo simulation (SRIM). This suggests that diagnosis at any locations in SiC devices can be realized using VSi quantum sensors. Luminescent spots with different depth ranging 4-60 μm showed similar ODMR spectra including its contrast, which means that a similar sensor sensitivity is expected. The results suggest that 3D arrayed VSi can act as quantum sensor elements with uniform sensitivity in SiC devices.

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