Relativistic diffusion coefficients for superluminous (auroral kilometric radiation) wave modes in space plasmas

2006 ◽  
Vol 111 (A11) ◽  
Author(s):  
Fuliang Xiao ◽  
Huiyong He ◽  
Qinghua Zhou ◽  
Huinan Zheng ◽  
Shui Wang
2007 ◽  
Vol 112 (A10) ◽  
pp. n/a-n/a ◽  
Author(s):  
Fuliang Xiao ◽  
Lunjin Chen ◽  
Huinan Zheng ◽  
Shui Wang

2007 ◽  
Author(s):  
F. Sahraoui ◽  
B. Grison ◽  
G. Belmont ◽  
J. F. Panis ◽  
L. Rezeau
Keyword(s):  

1986 ◽  
Vol 39 (3) ◽  
pp. 407
Author(s):  
LT Ball ◽  
RG Hewitt

Auroral kilometric radiation, Jupiter's decametric and Saturn's kilometric radio emissions, solar microwave spike bursts and microwave emissions from some flare stars have all been attributed to the electron cyclotron maser instability. The maser instability is usually assumed to involve the generation of magnetoionic waves. We investigate the modifications to the magneto ionic wave modes due to finite Larmor radius (FLR) corrections arising from a 'warm' background electron plasma with a Maxwellian distribution. We then consider the effects of these modifications on maser emission at frequencies near the fundamental of the electron cyclotron frequency fl e. The FLR effects are found to be small; the maximum temporal growth rate generally differs by ~ 10% from that for emission occurring in the magnetoionic modes. Small shifts occur in the frequencies and propagation angles corresponding to the maximum growth rates.


Author(s):  
E.G. Bithell ◽  
W.M. Stobbs

It is well known that the microstructural consequences of the ion implantation of semiconductor heterostructures can be severe: amorphisation of the damaged region is possible, and layer intermixing can result both from the original damage process and from the enhancement of the diffusion coefficients for the constituents of the original composition profile. A very large number of variables are involved (the atomic mass of the target, the mass and energy of the implant species, the flux and the total dose, the substrate temperature etc.) so that experimental data are needed despite the existence of relatively well developed models for the implantation process. A major difficulty is that conventional techniques (e.g. electron energy loss spectroscopy) have inadequate resolution for the quantification of any changes in the composition profile of fine scale multilayers. However we have demonstrated that the measurement of 002 dark field intensities in transmission electron microscope images of GaAs / AlxGa1_xAs heterostructures can allow the measurement of the local Al / Ga ratio.


Sign in / Sign up

Export Citation Format

Share Document