HHS Awards $527 million for HIV/AIDS Care in High Incidence Areas.

South Africa has not escaped the rising prevalence and severe impact of HIV/AIDS in relation to women. From an economic and social vantage point, the HIV/AIDS epidemic effects women the hardest, with underprivileged black women the most susceptible to the virus. The theoretical framework of this paper focuses on the intersection between HIV/AIDS, gender inequality and gender violence, and more specifically on certain cultural practices and customs that contribute towards and exacerbate women’s subordination and inequality, which in turn increase women’s exposure to HIV infection. Relevant to this focus is inevitably an analysis of the perceived threats to specific fundamental human rights as a result of some of the entrenched practices that continue to reinforce women’s subordinate position in society, aggravated by the high incidence of gender violence.

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High incidence of hypertriglyceridemia in a Brazilian cohort of people living with HIV/AIDS undergoing antiretroviral treatment in Belo Horizonte, 2001-2010

Revista da Sociedade Brasileira de Medicina Tropical ◽

10.1590/0037-8682-0078-2016 ◽

2016 ◽

Vol 49 (6) ◽

pp. 758-762 ◽

Cited By ~ 3

Author(s):

Cássia Cristina Pinto Mendicino ◽

Letícia Pena Braga ◽

Cristiane Aparecida Menezes de Pádua ◽

Mark Drew Crosland Guimarães

Keyword(s):

Antiretroviral Treatment ◽

People Living With Hiv ◽

High Incidence ◽

Belo Horizonte ◽

Living With Hiv ◽

Brazilian Cohort ◽

Hiv Aids

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The high incidence of late presenters for HIV/AIDS infection in the Lodz province, Poland in the years 2009–2016: we are still far from the UNAIDS 90% target

AIDS Care ◽

10.1080/09540121.2018.1470306 ◽

2018 ◽

Vol 30 (12) ◽

pp. 1538-1541 ◽

Cited By ~ 3

Author(s):

Kamila Wójcik-Cichy ◽

Olga Jabłonowska ◽

Anna Piekarska ◽

Elżbieta Jabłonowska

Keyword(s):

Late Presenters ◽

High Incidence ◽

Hiv Aids

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The observation of defects on (100) CdTe surfaces by chemical etching

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100131759 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1424-1425

Author(s):

M.E. Lee

Keyword(s):

Single Crystal ◽

Grain Boundaries ◽

Single Crystals ◽

Chemical Etching ◽

Crystalline Perfection ◽

Crystalline Defects ◽

High Incidence ◽

Crystallographic Defects ◽

Cdznte Substrates ◽

Device Technology

The crystalline perfection of bulk CdTe substrates plays an important role in their use in infrared device technology. The application of chemical etchants to determine crystal polarity or the density and distribution of crystallographic defects in (100) CdTe is not well understood. The lack of data on (100) CdTe surfaces is a result of the apparent difficulty in growing (100) CdTe single crystal substrates which is caused by a high incidence of twinning. Many etchants have been reported to predict polarity on one or both (111) CdTe planes but are considered to be unsuitable as defect etchants. An etchant reported recently has been considered to be a true defect etchant for CdTe, MCT and CdZnTe substrates. This etchant has been reported to reveal crystalline defects such as dislocations, grain boundaries and inclusions in (110) and (111) CdTe. In this study the effect of this new etchant on (100) CdTe surfaces is investigated.The single crystals used in this study were (100) CdTe as-cut slices (1mm thickness) from Bridgman-grown ingots.

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