scholarly journals Enhancing photovoltages at p-type semiconductors through a redox-active metal-organic framework surface coating

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Anna M. Beiler ◽  
Brian D. McCarthy ◽  
Ben A. Johnson ◽  
Sascha Ott

AbstractSurface modification of semiconductors can improve photoelectrochemical performance by promoting efficient interfacial charge transfer. We show that metal-organic frameworks (MOFs) are viable surface coatings for enhancing cathodic photovoltages. Under 1-sun illumination, no photovoltage is observed for p-type Si(111) functionalized with a naphthalene diimide derivative until the monolayer is expanded in three dimensions in a MOF. The surface-grown MOF thin film at Si promotes reduction of the molecular linkers at formal potentials >300 mV positive of their thermodynamic potentials. The photocurrent is governed by charge diffusion through the film, and the MOF film is sufficiently conductive to power reductive transformations. When grown on GaP(100), the reductions of the MOF linkers are shifted anodically by >700 mV compared to those of the same MOF on conductive substrates. This photovoltage, among the highest reported for GaP in photoelectrochemical applications, illustrates the power of MOF films to enhance photocathodic operation.

2020 ◽  
Author(s):  
Anna Beiler ◽  
Brian McCarthy ◽  
Ben A Johnson ◽  
Sascha Ott

<p>Metal-organic frameworks (MOFs) interfaced with visible-light-absorbing semiconductors offer a novel approach to improve photoelectrochemical performances. When tested under 1-sun illumination, a naphthalene diimide (NDI)-based monolayer immobilized at p-type Si(111) undergoes two sequential one-electron reductions close to their thermodynamic potentials. No photovoltage is observed until the NDI monolayer is expanded in three dimensions in a PIZOF-type Zr(NDI) MOF (PIZOF = porous interpenetrated zirconium organic framework). The surface-grown MOF thin film promotes photo-induced charge separation and electron transfer across the interface and through the film, resulting in reduction of the molecular linkers at formal potentials >300 mV positive of their thermodynamic potentials. The apparent diffusion coefficient is similar to that measured at a conductive electrode (10<sup>-10</sup> cm<sup>2</sup> s<sup>-1</sup>), indicating that the observed photocurrent is governed by charge diffusion through the Zr(NDI) MOF film. The charges accumulated in the NDI-based MOF can be extracted by an external electron acceptor, demonstrating sufficient conductivity throughout the MOF film to power reductive transformations. When grown on GaP(100), the potentials of the NDI reductions in the MOF film are shifted anodically by >700 mV compared to those of the same MOF on conductive substrates. This photovoltage, among the highest reported for GaP in photoelectrochemical applications, illustrates the power of MOF thin films to improve photocathodic performance. </p>


2020 ◽  
Author(s):  
Anna Beiler ◽  
Brian McCarthy ◽  
Ben A Johnson ◽  
Sascha Ott

<p>Metal-organic frameworks (MOFs) interfaced with visible-light-absorbing semiconductors offer a novel approach to improve photoelectrochemical performances. When tested under 1-sun illumination, a naphthalene diimide (NDI)-based monolayer immobilized at p-type Si(111) undergoes two sequential one-electron reductions close to their thermodynamic potentials. No photovoltage is observed until the NDI monolayer is expanded in three dimensions in a PIZOF-type Zr(NDI) MOF (PIZOF = porous interpenetrated zirconium organic framework). The surface-grown MOF thin film promotes photo-induced charge separation and electron transfer across the interface and through the film, resulting in reduction of the molecular linkers at formal potentials >300 mV positive of their thermodynamic potentials. The apparent diffusion coefficient is similar to that measured at a conductive electrode (10<sup>-10</sup> cm<sup>2</sup> s<sup>-1</sup>), indicating that the observed photocurrent is governed by charge diffusion through the Zr(NDI) MOF film. The charges accumulated in the NDI-based MOF can be extracted by an external electron acceptor, demonstrating sufficient conductivity throughout the MOF film to power reductive transformations. When grown on GaP(100), the potentials of the NDI reductions in the MOF film are shifted anodically by >700 mV compared to those of the same MOF on conductive substrates. This photovoltage, among the highest reported for GaP in photoelectrochemical applications, illustrates the power of MOF thin films to improve photocathodic performance. </p>


2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Julia Oktawiec ◽  
Henry Z. H. Jiang ◽  
Jenny G. Vitillo ◽  
Douglas A. Reed ◽  
Lucy E. Darago ◽  
...  

2011 ◽  
Vol 133 (37) ◽  
pp. 14814-14822 ◽  
Author(s):  
Eric D. Bloch ◽  
Leslie J. Murray ◽  
Wendy L. Queen ◽  
Sachin Chavan ◽  
Sergey N. Maximoff ◽  
...  

2017 ◽  
Vol 139 (16) ◽  
pp. 5992-5997 ◽  
Author(s):  
Yuri Tulchinsky ◽  
Christopher H. Hendon ◽  
Kirill A. Lomachenko ◽  
Elisa Borfecchia ◽  
Brent C. Melot ◽  
...  

2021 ◽  
Author(s):  
Martin Schröder ◽  
Louis Kimberley ◽  
Alena M. Sheveleva ◽  
Jiangnan Li ◽  
Joseph H. Carter ◽  
...  

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