scholarly journals Critical switching current density of magnetic tunnel junction with shape perpendicular magnetic anisotropy through the combination of spin-transfer and spin-orbit torques

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Doo Hyung Kang ◽  
Mincheol Shin

AbstractRecently, magnetic tunnel junctions (MTJs) with shape perpendicular magnetic anisotropy (S-PMA) have been studied extensively because they ensure high thermal stability at junctions smaller than 20 nm. Furthermore, spin-transfer torque (STT) and spin-orbit torque (SOT) hybrid switching, which guarantees fast magnetization switching and deterministic switching, has recently been achieved in experiments. In this study, the critical switching current density of the MTJ with S-PMA through the interplay of STT and SOT was investigated using theoretical and numerical methods. As the current density inducing SOT ($$J_{\text {SOT}}$$ J SOT ) increases, the critical switching current density inducing STT ($$J_{\text {STT,c}}$$ J STT,c ) decreases. Furthermore, for a given $$J_{\text {SOT}}$$ J SOT , $$J_{\text {STT,c}}$$ J STT,c increases with increasing thickness, whereas $$J_{\text {STT,c}}$$ J STT,c decreases as the diameter increases. Moreover, $$J_{\text {STT,c}}$$ J STT,c in the plane of thickness and spin-orbit field-like torque ($$\beta$$ β ) was investigated for a fixed $$J_{\text {SOT}}$$ J SOT and diameter. Although $$J_{\text {STT,c}}$$ J STT,c decreases with increasing $$\beta$$ β , $$J_{\text {STT,c}}$$ J STT,c slowly increases with increasing thickness and increasing $$\beta$$ β . The power consumption was investigated as a function of thickness and diameter at the critical switching current density. Experimental confirmation of these results using existing experimental techniques is anticipated.

Author(s):  
Rachid Sbiaa ◽  
Khaled Bouziane

A study on spin transfer torque switching in a magnetic tunnel junction with perpendicular magnetic anisotropy is presented. The switching current can be strongly reduced under a spin torque oscillator (STO), and its use in addition to the conventional transport in magnetic tunnel junctions (MTJ) should be considered. The reduction of the switching current from the parallel state to the antiparallel state is greater than in  the opposite direction, thus minimizing the asymmetry of the resistance versus current in the hysteresis loop. This reduction of both switching current and asymmetry under a spin torque oscillator occurs only during the writing process and does not affect the thermal stability of the free layer.


SPIN ◽  
2019 ◽  
Vol 09 (03) ◽  
pp. 1940010
Author(s):  
Jiaqi Wei ◽  
Kaihua Cao ◽  
Hushan Cui ◽  
Kewen Shi ◽  
Wenlong Cai ◽  
...  

Owing to improved thermal stability and scalability, materials with perpendicular magnetic anisotropy (PMA) are extremely attractive. The all perpendicular magnetic tunnel junction ([Formula: see text]-MTJ) devices are primarily devoted to spin transfer torque (STT)-induced switching and few works report their microwave emission. Here, we demonstrate the basic results of RF function in nanoscale [Formula: see text]-MTJ which has two different thickness free layers separated by atom-thick tungsten insertion. The ultrathin W spacer layer not only enables the two CoFeB free layers precess as a single layer but also greatly enhances the PMA which further induces high-emission frequency. The all perpendicular spin transfer torque nano-oscillator (STNO) exhibited high frequency (7.6[Formula: see text]GHz) and large current modulation capability of [Formula: see text] at moderate external magnetic field. Along with our previous work on STT switching utilizing the similar stack, such a multifunctional structure could bring low cost solutions to Internet of Things (IoT) network applications.


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