Subwavelength Si nanowire arrays for self-cleaning antireflection coatings

2010 ◽  
Vol 20 (48) ◽  
pp. 10924 ◽  
Author(s):  
Yu-An Dai ◽  
Hung-Chih Chang ◽  
Kun-Yu Lai ◽  
Chin-An Lin ◽  
Ren-Jei Chung ◽  
...  
2021 ◽  
Vol 1837 (1) ◽  
pp. 012005
Author(s):  
Pai Lu ◽  
Xuyuan Chen ◽  
Per Ohlckers ◽  
Einar Halvorsen ◽  
Martin Hoffmann ◽  
...  

2010 ◽  
Vol 160-162 ◽  
pp. 1331-1335 ◽  
Author(s):  
Chuan Bo Li ◽  
Kristel Fobelets ◽  
S.N. Syed Jalal ◽  
Wei A. Ng ◽  
Zahid A.K. Durrani

The influence of the chemical modification on the electrical property of Si nanowire array was studied. It is found that H-terminated Si nanowire has a better electrical conductivity while OH-passivation could increase their resistance. It is believed that the introducing of OH group on the surface nanowire increases the interface traps and it is confirmed by our 1/f noise measurement.


2019 ◽  
Vol 11 (47) ◽  
pp. 44325-44332 ◽  
Author(s):  
Pengcheng Zhang ◽  
Chengxin Peng ◽  
Xiangsi Liu ◽  
Fei Dong ◽  
Hongyi Xu ◽  
...  

2009 ◽  
Vol 4 (1-2) ◽  
pp. 4-6 ◽  
Author(s):  
H. Föll ◽  
H. Hartz ◽  
E. Ossei-Wusu ◽  
J. Carstensen ◽  
O. Riemenschneider

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