Optimization of the Refractive Index of Antireflection Coatings on Monocrystalline Silicon Solar Cells for Photovoltaic Application

In this work, the following materials have been chosen as anti-reflection layer, namely hafnium (HfO2), magnesium fluoride (MgF2), silicon oxynitrides (SiOxNy), silicon oxides (SiOx), silicon nitride (Si3N4) and hydrogenated silicon nitride (SiNx:H). The calculations were made on the basis of values of layer thicknesses and refractive indices that allow the phase and amplitude conditions to be respected and amplitude conditions. Numerical simulations have shown that low reflectivities at the surface of the surface of the plane cell coated with a simple layer, can be obtained. For example, for simple coatings materials based on Si3N4 and HfO2, we obtain a value of reflectivity around 3 and 2 % respectively. The structures with multilayer coatings such as MgF2/SiNx:H/Si, give a reflectivity of around 1 %. Thus, the refraction index of the coating is an important parameter that plays a major parameter that plays a major role in the optical properties of materials. The closer the refractive index is close to the index of the substrate or the layer above the substrate, the higher the reflectivity.

Influence of the Characteristics of Multilayer Interference Antireflection Coatings Based on Nb, Si, and Al Oxides on the Laser-Induced Damage Threshold of ZnGeP2 Single Crystal

In this work, the effect of the defect structure and the parameters of antireflection interference coatings based on alternating layers of Nb2O5/Al2O3 and Nb2O5/SiO2 layers on the laser-induced damage threshold of ZGP crystals under the action of Ho:YAG laser radiation at a wavelength of 2.097 μm was determined. Coating deposition was carried out using the ion-beam sputtering method. The laser-induced damage threshold of the sample with a coating based on alternating layers Nb2O5 and SiO2 was W0d = 1.8 J/cm2. The laser-induced damage threshold of the coated sample based on alternating layers of Nb2O5 and Al2O3 was W0d = 2.35 J/cm2. It has been found that the presence of silicon conglomerates in an interference antireflection coating leads to a decrease in the laser-induced damage threshold of a nonlinear crystal due to local mechanical stresses and the scattering of incident laser radiation.

Simulating the spectral characteristics of reflection in planar porous structures with antireflection coatings ZnS/DyF3

This paper presents the results of modeling a planar multilayer structure with layers of porous silicon, ZnS and DyF3 coatings by the optical matrix method. It was shown that the optical matrix method, taking into account the model of porous silicon with a variable band gap, which takes into account the porosity gradient, allows us to approximate the course of the curve of the real experiment

Selection of Materials for Double Layer Antireflection Coating of Silicon Solar Cell

In present work an attempt has been made to select material to design double layer antireflection coatings (DLARC) for silicon solar cell, theoretically. In this regard, silicon nitride (Si3N4) is used along with MgF2 and SiO2 to design DLARC to achieve zero reflectance over wide range of spectra. Reflection spectra for DLARC systems of MgF2/Si3N4 and SiO2/Si3N4 have been evaluated numerically using transfer matrix method (TMM). Further, reflectance for MgF2/Si3N4 is investigated at various monitoring wavelengths (o = 550, 600, 650 and 700 nm). Calculated reflectance has been used in PC1D simulator to study the effect of double layer antireflection coating on optical and electrical parameters of silicon solar cell. Simulation results shows, reduction in reflectance form > 30% down to zero in the wavelength range 500 – 700 nm with conversion efficiency 21.33% at 600 nm for MgF2/Si3N4.