Engineering the electronic and magnetic properties of d0 2D dichalcogenide materials through vacancy doping and lattice strains
2016 ◽
Vol 18
(10)
◽
pp. 7163-7168
◽
Keyword(s):
The effects of different vacancy defects in 2D d0 are investigated systematically using first principle methods.
2019 ◽
Vol 570
◽
pp. 110-115
◽
2020 ◽
Vol 201
(3-4)
◽
pp. 437-450
2019 ◽
Vol 32
(10)
◽
pp. 3217-3226
◽
2015 ◽
Vol 33
◽
pp. 110-118
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