Electrical control of memristance and magnetoresistance in oxide magnetic tunnel junctions

Nanoscale ◽  
2015 ◽  
Vol 7 (14) ◽  
pp. 6334-6339 ◽  
Author(s):  
Kun Zhang ◽  
Yan-ling Cao ◽  
Yue-wen Fang ◽  
Qiang Li ◽  
Jie Zhang ◽  
...  

Electric-field control of magnetic and transport properties of magnetic tunnel junctions has been demonstrated.

2014 ◽  
Vol 105 (4) ◽  
pp. 042410 ◽  
Author(s):  
Hao Meng ◽  
Vinayak Bharat Naik ◽  
Ruisheng Liu ◽  
Guchang Han

2020 ◽  
Vol 59 (10) ◽  
pp. 103001
Author(s):  
Aurelie Spiesser ◽  
Shintaro Kon ◽  
Yukiko Yasukawa ◽  
Shinji Yuasa ◽  
Hiroshi Imamura ◽  
...  

2009 ◽  
Vol 94 (25) ◽  
pp. 252102 ◽  
Author(s):  
Erjun Kan ◽  
Hongjun Xiang ◽  
Jinlong Yang ◽  
Myung-Hwan Whangbo

2020 ◽  
Author(s):  
Min-Gu Kang ◽  
Jong-Guk Choi ◽  
Jimin Jeong ◽  
Jae Yeol Park ◽  
Hyeon-Jong Park ◽  
...  

Abstract Spin-orbit coupling effect in structures with broken inversion symmetry, known as the Rashba effect, facilitates spin-orbit torques (SOTs) in heavy metal/ferromagnet/oxide structures, along with the spin Hall effect. Electric-field control of the Rashba effect is established for semiconductor interfaces, but it is challenging in structures involving metals owing to the screening effect. Here, we report that the Rashba effect in Pt/Co/AlOx structures is laterally modulated by electric voltages, generating out-of-plane SOTs. This enables field-free switching of the perpendicular magnetization and electrical control of the switching polarity. Changing the gate oxide reverses the sign of out-of-plane SOT while maintaining the same sign of voltage-controlled magnetic anisotropy, which confirms the Rashba effect at the Co/oxide interface is a key ingredient of the electric-field modulation. The electrical control of SOT switching polarity in a reversible and non-volatile manner can be utilized for programmable logic operations in spintronic logic-in-memory devices.


2020 ◽  
Vol 8 (9) ◽  
pp. 3137-3146 ◽  
Author(s):  
Xuefei Han ◽  
Wenbo Mi ◽  
Dunhui Wang

Spin-dependent transport properties and light modulation of Fe4N/C60/Fe4N and LSMO/C60/Fe4N single molecule magnetic tunnel junctions.


2013 ◽  
Vol 103 (5) ◽  
pp. 052402 ◽  
Author(s):  
Léa Cuchet ◽  
Bernard Rodmacq ◽  
Stéphane Auffret ◽  
Ricardo C. Sousa ◽  
Clarisse Ducruet ◽  
...  

2005 ◽  
Vol 98 (10) ◽  
pp. 103504 ◽  
Author(s):  
J. C. A. Huang ◽  
C. Y. Hsu ◽  
Y. F. Liao ◽  
M. Z. Lin ◽  
C. H. Lee

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