Electric-field control of field-free spin-orbit torque switching via laterally modulated Rashba effect in Pt/Co/AlOx structures

Spin-orbit coupling effect in structures with broken inversion symmetry, known as the Rashba effect, facilitates spin-orbit torques (SOTs) in heavy metal/ferromagnet/oxide structures, along with the spin Hall effect. Electric-field control of the Rashba effect is established for semiconductor interfaces, but it is challenging in structures involving metals owing to the screening effect. Here, we report that the Rashba effect in Pt/Co/AlOx structures is laterally modulated by electric voltages, generating out-of-plane SOTs. This enables field-free switching of the perpendicular magnetization and electrical control of the switching polarity. Changing the gate oxide reverses the sign of out-of-plane SOT while maintaining the same sign of voltage-controlled magnetic anisotropy, which confirms the Rashba effect at the Co/oxide interface is a key ingredient of the electric-field modulation. The electrical control of SOT switching polarity in a reversible and non-volatile manner can be utilized for programmable logic operations in spintronic logic-in-memory devices.

Giant field-like torque by the out-of-plane magnetic spin Hall effect in a topological antiferromagnet

Spin-orbit torques (SOT) enable efficient electrical control of the magnetic state of ferromagnets, ferrimagnets and antiferromagnets. However, the conventional SOT has severe limitation that only in-plane spins accumulate near the surface, whether interpreted as a spin Hall effect (SHE) or as an Edelstein effect. Such a SOT is not suitable for controlling perpendicular magnetization, which would be more beneficial for realizing low-power-consumption memory devices. Here we report the observation of a giant magnetic-field-like SOT in a topological antiferromagnet Mn3Sn, whose direction and size can be tuned by changing the order parameter direction of the antiferromagnet. To understand the magnetic SHE (MSHE)- and the conventional SHE-induced SOTs on an equal footing, we formulate them as interface spin-electric-field responses and analyzed using a macroscopic symmetry analysis and a complementary microscopic quantum kinetic theory. In this framework, the large out-of-plane spin accumulation due to the MSHE has an inter-band origin and is likely to be caused by the large momentum-dependent spin splitting in Mn3Sn. Our work demonstrates the unique potential of antiferromagnetic Weyl semimetals in overcoming the limitations of conventional SOTs and in realizing low-power spintronics devices with new functionalities.

Giant charge-to-spin conversion in ferromagnet via spin-orbit coupling

Converting charge current into spin current via the spin Hall effect enables efficient manipulation of magnetization by electrical current. However, its geometrical restriction is a serious obstacle to device applications because it prevents switching of perpendicular magnetization in the absence of an external field. To resolve this issue, ferromagnetic materials have attracted attentions because their time reversal asymmetry induces magnetic-dependent charge-to-spin conversion that removes this restriction. Here, we achieved a large enhancement of magnetic-dependent charge-to-spin conversion by clarifying its mechanism. Through layer thickness dependence of the conversion efficiency, we revealed a coexistence of interfacial and bulk contributions to the magnetic-dependent charge-to-spin conversion. Moreover, the interfacial contribution to charge-to-spin conversion is found to be dominant and can be controlled via interfacial band engineering. The efficiency of charge-to-spin conversion in ferromagnet was found to be an order larger than that of other materials with reduced symmetry.