Ag-mesh-combined graphene for an indium-free current spreading layer in near-ultraviolet light-emitting diodes

RSC Advances ◽  
2015 ◽  
Vol 5 (92) ◽  
pp. 75325-75332 ◽  
Author(s):  
Jung-Hong Min ◽  
So-Yeong Jang ◽  
Ki-Young Kim ◽  
Sang-Bae Choi ◽  
Won-Seok Seong ◽  
...  
Keyword(s):  
Sheet Resistance ◽  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Graphene Sheets ◽  
Current Spreading ◽  
Light Emitting ◽  
Near Ultraviolet ◽  
Free Current ◽  
Ultraviolet Light Emitting Diodes

Current spreading could be improved by using Ag-mesh-combined graphene sheets due to dramatically reducing the sheet resistance.

Internal quantum efficiency of highly-efficient InxGa1−xN-based near-ultraviolet light-emitting diodes

2003 ◽  
Vol 83 (24) ◽  
pp. 4906-4908 ◽  
Author(s):  
Satoshi Watanabe ◽  
Norihide Yamada ◽  
Masakazu Nagashima ◽  
Yusuke Ueki ◽  
Chiharu Sasaki ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Light Emitting ◽  
Highly Efficient ◽  
Near Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

scholarly journals Enhanced Radiative Recombination Rate by Local Potential Fluctuation in InGaN/AlGaN Near-Ultraviolet Light-Emitting Diodes

2019 ◽  
Vol 9 (5) ◽  
pp. 871 ◽  
Author(s):  
Abu Islam ◽  
Dong-Soo Shim ◽  
Jong-In Shim
Keyword(s):  
Potential Energy ◽  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Energy Fluctuation ◽  
Light Emitting ◽  
Near Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

We investigate the differences in optoelectronic performances of InGaN/AlGaN multiple-quantum-well (MQW) near-ultraviolet light-emitting diodes by using samples with different indium compositions. Various macroscopic characterizations have been performed to show that the strain-induced piezoelectric field (FPZ), the crystal quality, and the internal quantum efficiency increase with the sample’s indium composition. This improved performance is owing to the carrier recombination at relatively defect-free indium-rich localized sites, caused by the local in-plane potential-energy fluctuation in MQWs. The potential-energy fluctuation in MQWs are considered to be originating from the combined effects of the inhomogeneous distribution of point defects, FPZ, and indium compositions.

An Intense Red-Emitting Phosphor YBa3(PO4)3:Eu3+ for Near-Ultraviolet Light Emitting Diodes Application

2011 ◽  
Vol 14 (11) ◽  
pp. H438 ◽  
Author(s):  
Shuangyu Xin ◽  
Yuhua Wang ◽  
Zhaofeng Wang ◽  
Feng Zhang ◽  
Yan Wen ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Near Ultraviolet ◽  
Ultraviolet Light Emitting Diodes ◽  
Red Emitting Phosphor
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