Surface engineering of PbS quantum dot sensitized solar cells with a conversion efficiency exceeding 7%

2016 ◽  
Vol 4 (19) ◽  
pp. 7214-7221 ◽  
Author(s):  
Shuang Jiao ◽  
Jin Wang ◽  
Qing Shen ◽  
Yan Li ◽  
Xinhua Zhong

A CdS passivation layer was introduced to a PbS QD surface to synthesize PbS/CdS core/shell QDs through an ion exchange procedure, achieving a record PCE of 7.19% for PbS-based liquid-junction quantum dot sensitized solar cells.

2020 ◽  
Vol 2 (1) ◽  
pp. 286-295 ◽  
Author(s):  
M. Kamruzzaman

ZnO nanorod (NR) based inorganic quantum dot sensitized solar cells have gained tremendous attention for use in next generation solar cells.


Nano Energy ◽  
2016 ◽  
Vol 26 ◽  
pp. 114-122 ◽  
Author(s):  
Fei Huang ◽  
Juan Hou ◽  
Qifeng Zhang ◽  
Yuan Wang ◽  
Robert C. Massé ◽  
...  

2016 ◽  
Vol 4 (38) ◽  
pp. 14849-14856 ◽  
Author(s):  
Wenliang Feng ◽  
Leilei Zhao ◽  
Jun Du ◽  
Yan Li ◽  
Xinhua Zhong

A highly conductive gel electrolyte based on sodium carboxymethylcellulose was developed to construct quasi-solid-state quantum dot sensitized solar cells that exhibit power conversion efficiency over 9% and a significant improvement in stability compared to liquid-junction QDSCs.


2021 ◽  
Vol 727 ◽  
pp. 138678
Author(s):  
Mei Xin Chen ◽  
Ya Qian Bai ◽  
Xin Na Guan ◽  
Jia Wei Chen ◽  
Jing Hui Zeng

2017 ◽  
Vol 9 (47) ◽  
pp. 41104-41110 ◽  
Author(s):  
Jin Hyuck Heo ◽  
Min Hyuk Jang ◽  
Min Ho Lee ◽  
Dong Hee Shin ◽  
Do Hun Kim ◽  
...  

2014 ◽  
Vol 17 (1) ◽  
Author(s):  
Stavroula Sfaelou ◽  
Vassilios Dracopoulos ◽  
Panagiotis Lianos

AbstractQuantum dot sensitized solar cells have been made by using nanocrystalline titania as photocatalyst, sensitized in the Visible by a combination of quantum dot sensitizers: first a layer of CdS, followed by deposition of CdSe and finally a passivation layer of ZnS on the top. An inox grid was used as anode electrode and its functionality was compared with that of transparent fluorine-doped tin oxide (FTO) electrodes. Cu


2018 ◽  
Vol 29 (17) ◽  
pp. 14796-14802 ◽  
Author(s):  
Wei Zheng ◽  
Yinan Zhang ◽  
Di Wang ◽  
Qiming Wang

Energies ◽  
2018 ◽  
Vol 11 (8) ◽  
pp. 1931
Author(s):  
Hee-Je Kim ◽  
Jin-Ho Bae ◽  
Hyunwoong Seo ◽  
Masaharu Shiratani ◽  
Chandu Venkata Veera Muralee Gopi

Suppressing the charge recombination at the interface of photoanode/electrolyte is the crucial way to improve the quantum dot sensitized solar cells (QDSSCs) performance. In this scenario, ZnS/SiO2 blocking layer was deposited on TiO2/CuInS2 QDs to inhibit the charge recombination at photoanode/electrolyte interface. As a result, the TiO2/CuInS2/ZnS/SiO2 based QDSSCs delivers a power conversion efficiency (η) value of 4.63%, which is much higher than the TiO2/CuInS2 (2.15%) and TiO2/CuInS2/ZnS (3.23%) based QDSSCs. Impedance spectroscopy and open circuit voltage decay analyses indicate that ZnS/SiO2 passivation layer on TiO2/CuInS2 suppress the charge recombination at the interface of photoanode/electrolyte and enhance the electron lifetime.


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