scholarly journals An excess electron at polyethylene/vacuum interfaces using a reaction-field technique

2019 ◽  
Vol 21 (5) ◽  
pp. 2533-2539
Author(s):  
Yang Wang ◽  
Kai Wu ◽  
David Cubero

An excess electron in amorphous and crystalline polyethylene-vacuum interfaces. A precise reaction-field method is used to compute the surface states.

Author(s):  
J. M. Oblak ◽  
B. H. Kear

The “weak-beam” and systematic many-beam techniques are the currently available methods for resolution of closely spaced dislocations or other inhomogeneities imaged through strain contrast. The former is a dark field technique and image intensities are usually very weak. The latter is a bright field technique, but generally use of a high voltage instrument is required. In what follows a bright field method for obtaining enhanced resolution of partial dislocations at 100 KV accelerating potential will be described.A brief discussion of an application will first be given. A study of intermediate temperature creep processes in commercial nickel-base alloys strengthened by the Ll2 Ni3 Al γ precipitate has suggested that partial dislocations such as those labelled 1 and 2 in Fig. 1(a) are in reality composed of two closely spaced a/6 <112> Shockley partials. Stacking fault contrast, when present, tends to obscure resolution of the partials; thus, conditions for resolution must be chosen such that the phase shift at the fault is 0 or a multiple of 2π.


1988 ◽  
Vol 89 (5) ◽  
pp. 3086-3095 ◽  
Author(s):  
Kurt V. Mikkelsen ◽  
Hans Ågren ◽  
Hans Jo/rgen Aa. Jensen ◽  
Trygve Helgaker

2010 ◽  
Vol 111 (4) ◽  
pp. 904-913 ◽  
Author(s):  
Kristian O. Sylvester-Hvid ◽  
Kurt V. Mikkelsen ◽  
Mark A. Ratner

1994 ◽  
Vol 98 (37) ◽  
pp. 9365-9370 ◽  
Author(s):  
Michael Rosenblit ◽  
Joshua Jortner

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