Chemical vapour deposition of chromium-doped tungsten disulphide thin films on glass and steel substrates from molecular precursors

Polycrystalline thin films of chromium doped tungsten disulphide (WS2) have been deposited onto glass and steel substrates by Aerosol-Assisted Chemical Vapour Deposition (AACVD) at 450 °C.

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The influence of precursor on rhenium incorporation into Re-doped MoS2 (Mo1−xRexS2) thin films by aerosol-assisted chemical vapour deposition (AACVD)

Journal of Materials Chemistry C ◽

10.1039/c7tc01903c ◽

2017 ◽

Vol 5 (35) ◽

pp. 9044-9052 ◽

Cited By ~ 9

Author(s):

Naktal Al-Dulaimi ◽

Edward A. Lewis ◽

Nicky Savjani ◽

Paul D. McNaughter ◽

Sarah J. Haigh ◽

...

Keyword(s):

Thin Films ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Molecular Precursors

The molecular precursors [Mo(S2CNEt2)4] (1), [Re(S2CC6H5)(S3CC6H5)2] (2), and [Re2(μ-S)2(S2CNEt2)4] (3) were used to deposit thin films of Re-doped MoS2.

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The aerosol assisted chemical vapour deposition of SnSe and Cu2SnSe3thin films from molecular precursors

Chemical Communications ◽

10.1039/c4cc06792d ◽

2014 ◽

Vol 50 (92) ◽

pp. 14328-14330 ◽

Cited By ~ 29

Author(s):

Punarja Kevin ◽

Sajid N. Malik ◽

Mohammad A. Malik ◽

Paul O'Brien

Keyword(s):

Thin Films ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Molecular Precursors ◽

Glass Substrates

SnSe and Cu2SnSe3thin films have been deposited onto glass substrates by AACVD from molecular precursors.

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Electrochromic properties of polycrystalline thin films of tungsten trioxide prepared by chemical vapour deposition

Journal of Applied Electrochemistry ◽

10.1007/bf01093761 ◽

1988 ◽

Vol 18 (3) ◽

pp. 447-453 ◽

Cited By ~ 28

Author(s):

O. Bohnke ◽

C. Bohnke ◽

A. Donnadieu ◽

D. Davazoglou

Keyword(s):

Thin Films ◽

Chemical Vapour Deposition ◽

Tungsten Trioxide ◽

Vapour Deposition ◽

Chemical Vapour ◽

Electrochromic Properties ◽

Polycrystalline Thin Films

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Chemical vapour deposition of rhenium disulfide and rhenium-doped molybdenum disulfide thin films using single-source precursors

Journal of Materials Chemistry C ◽

10.1039/c6tc00489j ◽

2016 ◽

Vol 4 (12) ◽

pp. 2312-2318 ◽

Cited By ~ 28

Author(s):

Naktal Al-Dulaimi ◽

David J. Lewis ◽

Xiang Li Zhong ◽

M. Azad Malik ◽

Paul O'Brien

Keyword(s):

Thin Films ◽

Molybdenum Disulfide ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Single Source ◽

Single Source Precursors ◽

Polycrystalline Thin Films

Polycrystalline thin films of rhenium disulfide (ReS2) and the alloys Mo1−xRexS2 (0 ≤ x ≤ 0.06) have been deposited by aerosol-assisted chemical vapour deposition (AA-CVD) using [Re(μ-SiPr)3(SiPr)6] and [Mo(S2CNEt2)4] at 475 °C.

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Chemical vapour deposition (CVD) of nickel oxide using the novel nickel dialkylaminoalkoxide precursor [Ni(dmamp′)2] (dmamp′ = 2-dimethylamino-2-methyl-1-propanolate)

RSC Advances ◽

10.1039/d1ra03263a ◽

2021 ◽

Vol 11 (36) ◽

pp. 22199-22205

Author(s):

Rachel L. Wilson ◽

Thomas J. Macdonald ◽

Chieh-Ting Lin ◽

Shengda Xu ◽

Alaric Taylor ◽

...

Keyword(s):

Thin Films ◽

Nickel Oxide ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Hole Transport ◽

Blocking Layer ◽

The Novel ◽

Electron Blocking Layer

We describe CVD of nickel oxide (NiO) thin films using a new precursor [Ni(dmamp′)2], synthesised using a readily commercially available dialkylaminoalkoxide ligand (dmamp′), which is applied to synthesis of a hole transport-electron blocking layer.

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