Liquid-phase growth and optoelectronic properties of two-dimensional hybrid perovskites CH3NH3PbX3 (X = Cl, Br, I)

Nanoscale ◽  
2020 ◽  
Vol 12 (2) ◽  
pp. 1100-1108 ◽  
Author(s):  
Yu Bai ◽  
Haixin Zhang ◽  
Mingjing Zhang ◽  
Di Wang ◽  
Hui Zeng ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Optoelectronic Devices ◽  
Optoelectronic Properties ◽  
Two Dimensional ◽  
Phase Growth ◽  
Bottom Up ◽  
Liquid Phase Growth ◽  
2D Crystals

A bottom-up route to fabricate molecularly thin CH3NH3PbX3 (X = Cl, Br, I) perovskite 2D crystals has been discovered and is very promising for superior new optoelectronic devices.

scholarly journals Dielectrophoretic assembly of liquid-phase-exfoliated TiS3 nanoribbons for photodetecting applications

2017 ◽  
Vol 53 (45) ◽  
pp. 6164-6167 ◽  
Author(s):  
R. Frisenda ◽  
E. Giovanelli ◽  
P. Mishra ◽  
P. Gant ◽  
E. Flores ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Optoelectronic Devices ◽  
Two Dimensional ◽  
Two Dimensional Materials ◽  
Liquid Phase Exfoliation

Liquid-phase exfoliation produces colloidal two-dimensional materials that can be assembled by dielectrophoresis to fabricate optoelectronic devices.

Thermoelectric Properties of Cu-Doped n-Type Bi2Te2.85Se0.15 Prepared by Liquid Phase Growth Using a Sliding Boat

2014 ◽  
Vol 44 (6) ◽  
pp. 1870-1875 ◽  
Author(s):  
Hiroyuki Kitagawa ◽  
Tsukasa Matsuura ◽  
Toshihito Kato ◽  
Kin-ya Kamata
Keyword(s):  
Liquid Phase ◽  
Thermoelectric Properties ◽  
Phase Growth ◽  
Liquid Phase Growth

Laser-activated gold catalysts for liquid-phase growth of cadmium selenide nanowires

2015 ◽  
Vol 51 (11) ◽  
pp. 2145-2148 ◽  
Author(s):  
C. Huang ◽  
J. Mao ◽  
X. M. Chen ◽  
J. Yang ◽  
X. W. Du
Keyword(s):  
Liquid Phase ◽  
Liquid Medium ◽  
Cadmium Selenide ◽  
Room Temperature ◽  
Gold Catalysts ◽  
Device Fabrication ◽  
Phase Growth ◽  
Liquid Phase Growth ◽  
Cdse Nanowires ◽  
Cadmium Selenide Nanowires

A laser-activated-catalyst (LAC) technique was developed to grow CdSe nanowires in liquid medium at room temperature. The LAC technique can achieve accurate positioning of nanowires, which is beneficial for device fabrication.

Growth mechanism during selective epitaxy of p-doped SiC using VLS transport

2012 ◽  
Vol 1433 ◽  
Author(s):  
D. Carole ◽  
A. Vo-Ha ◽  
M. Lazar ◽  
N. Thierry-Jebali ◽  
D. Tournier ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Epitaxial Growth ◽  
Growth Mechanism ◽  
Growth Temperature ◽  
Liquid Droplets ◽  
Growth Mechanisms ◽  
Phase Growth ◽  
Selective Epitaxial Growth ◽  
Standard Configuration ◽  
Liquid Phase Growth

ABSTRACTSince a few years, VLS transport is studied not only for homoepitaxial SiC growth but also for SiC selective epitaxial growth (SEG). In this approach, a stacking of silicon and aluminum layers is deposited on the substrate and patterns are created by photolithography. Upon melting, the Al-Si liquid droplets are fed by propane to obtain the SEG of p-doped SiC. In this work, the growth mechanisms were deeper investigated, in particular the influence of the carrier gas (H2 or Ar) and the growth temperature. SEG experiments showed higher growth rates than those measured in the standard configuration (nonselective growth). Moreover, the SiC layers exhibited step-bunched areas characteristic of liquid phase growth but also areas with morphological features due to a disruption of the step-bunching growth mode.

Confined Liquid-Phase Growth of Crystalline Compound Semiconductors on Any Substrate

ACS Nano ◽  
2018 ◽  
Vol 12 (6) ◽  
pp. 5158-5167 ◽  
Author(s):  
Debarghya Sarkar ◽  
Wei Wang ◽  
Matthew Mecklenburg ◽  
Andrew J. Clough ◽  
Matthew Yeung ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Compound Semiconductors ◽  
Crystalline Compound ◽  
Phase Growth ◽  
Liquid Phase Growth

A Crucibleless Liquid Phase Growth Method of Preparing the Y‐Ba‐Cu‐0 Superconducting Films

1989 ◽  
Vol 169 ◽  
Author(s):  
K.C. Chen ◽  
L.H. Perng ◽  
C.H. Lin ◽  
T.P. Perng ◽  
T.B. Wu ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Buffer Layer ◽  
Melting Temperature ◽  
Superconducting Films ◽  
Superconducting Transition ◽  
Phase Growth ◽  
Initial Weight ◽  
Growth Method ◽  
Liquid Phase Growth

AbstractSuperconducting Y‐Ba‐Cu‐0 film can be prepared by a liquid phase growth method without crucible on 96 % and 99 % alumina substrates. A buffer layer of sputtered gold or platinum was necessary for the formation of Yba2Cu3Ox phase. The flux of Ba2Cu3O10. was appropriate for this purpose. For a film of 10 mm x 20 mm x 10 micron, 0.6 to 0.8 gm initial weight was optimal, the optimum melting temperature was 1090 to 1110 °C for 20 ‐ 30 minutes. In order to obtain films with superconducting transition, an additional Y2BaCuO5‐underlayer was necessary. The resultant optimal films had Tc‐onset of above 80 % and Tc ‐zero of typically around 60 K.

Liquid phase growth of Bi0.5Sb1.5Te3 by sliding-boat method

2003 ◽  
Vol 49 (4) ◽  
pp. 309-313 ◽  
Author(s):  
H. Kitagawa ◽  
T. Nagamori ◽  
T. Tatsuta ◽  
T. Kitamura ◽  
Y. Shinohara ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Phase Growth ◽  
Liquid Phase Growth
Sign in / Sign up

Export Citation Format

Share Document