scholarly journals Effect of surface modification and laser repetition rate on growth, structural, electronic and optical properties of GaN nanorods on flexible Ti metal foil

RSC Advances ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 2113-2122 ◽  
Author(s):  
Ch. Ramesh ◽  
P. Tyagi ◽  
J. Kaswan ◽  
B. S. Yadav ◽  
A. K. Shukla ◽  
...  

The effect of flexible Ti metal foil surface modification and laser repetition rate in laser molecular beam epitaxy growth process on the evolution of GaN nanorods and their structural, electronic and optical properties has been investigated.

CrystEngComm ◽  
2019 ◽  
Vol 21 (36) ◽  
pp. 5448-5454 ◽  
Author(s):  
Prashant Tyagi ◽  
Ch. Ramesh ◽  
B. S. Yadav ◽  
S. S. Kushvaha ◽  
M. Senthil Kumar

Self-aligned GaN nanorod assembly directly grown on metal foil substrates is very attractive for developing flexible devices.


2010 ◽  
Vol 96 (6) ◽  
pp. 061912 ◽  
Author(s):  
O. Landré ◽  
V. Fellmann ◽  
P. Jaffrennou ◽  
C. Bougerol ◽  
H. Renevier ◽  
...  

1994 ◽  
Vol 65 (11) ◽  
pp. 1424-1426 ◽  
Author(s):  
R. S. Goldman ◽  
H. H. Wieder ◽  
K. L. Kavanagh ◽  
K. Rammohan ◽  
D. H. Rich

MRS Bulletin ◽  
1991 ◽  
Vol 16 (6) ◽  
pp. 23-29 ◽  
Author(s):  
Federico Capasso

During the last decade a powerful new approach for designing semiconductor structures with tailored electronic and optical properties, bandgap engineering, has spawned a new generation of electronic and photonic devices. Central to bandgap engineering is the notion that by spatially varying the composition and the doping of a semiconductor over distances ranging from a few microns down to ~2.5 Å (~1 monolayer), one can tailor the band structure of a material in a nearly arbitrary and continuous way. Thus semiconductor structures with new electronic and optical properties can be custom-designed for specific applications.The enabling technology which has made bandgap engineering an exciting reality with far reaching implications for science and technology is molecular beam epitaxy (MBE), pioneered by Cho and Arthur in the late 1960s.In the subsequent decade MBE demonstrated jts ability to create ultra-thin (10–100 Å) layers and atomically abrupt interfaces between two different semiconductors (heterojunctions).


2017 ◽  
Vol 4 (16) ◽  
pp. 1700166 ◽  
Author(s):  
Jens Becking ◽  
Albert Gröbmeyer ◽  
Martin Kolek ◽  
Uta Rodehorst ◽  
Susanne Schulze ◽  
...  

2004 ◽  
Vol 11 (03) ◽  
pp. 259-264
Author(s):  
V. M. MURUKESHAN ◽  
M. A. KHIRMAN ◽  
H. Y. ZHENG ◽  
J. L. TAN

This paper discusses the results obtained with a long pulse laser (such as a CO2 laser) assisted shaping of microspherical lenses at the end face of a specialty image fiber. The 600-μm-diameter image fiber consists of 15 000 pixels (individual fibers) with a spatial resolution of 267/mm. When laser-assisted heating is induced at the surface of the fiber tip, it tends to become spherical in shape due to surface tension. The curvature formed at the surface will act as the microspherical lens. The effects of the laser repetition rate and irradiation time on the surface finish and curvature of the shaped lens are illustrated in this paper.


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