scholarly journals Thickness induced metal to insulator charge transport and unusual hydrogen response in granular palladium nanofilms

2020 ◽  
Vol 22 (47) ◽  
pp. 27861-27872
Author(s):  
Dharmendra K. Singh ◽  
Praveen S. G. ◽  
Adithya Jayakumar ◽  
Suma M. N. ◽  
Vinayak B. Kamble ◽  
...  

This work reports evolution of charge transport properties in granular ultra-thin films of palladium of varying thickness using hydrogen as an extra parameter to control the charge transport. A percolation model has been proposed which details this correlation.

2001 ◽  
Vol 388 (1-2) ◽  
pp. 171-176 ◽  
Author(s):  
R. Valaski ◽  
S. Ayoub ◽  
L. Micaroni ◽  
I.A. Hümmelgen

2020 ◽  
Vol 8 (18) ◽  
pp. 9364-9372 ◽  
Author(s):  
Jekyung Kim ◽  
Sage R. Bauers ◽  
Imran S. Khan ◽  
John Perkins ◽  
Bo-In Park ◽  
...  

Nitride materials with mixed ionic and covalent bonding character and resulting good charge transport properties are attractive for optoelectronic devices.


2019 ◽  
Vol 1 (1) ◽  
pp. 414-420 ◽  
Author(s):  
Clément Barraud ◽  
Matthieu Lemaitre ◽  
Roméo Bonnet ◽  
Jacko Rastikian ◽  
Chloé Salhani ◽  
...  

Charge transport in graphene based organic rectifier.


2019 ◽  
Vol 11 (25) ◽  
pp. 22561-22574 ◽  
Author(s):  
Erfan Mohammadi ◽  
Chuankai Zhao ◽  
Fengjiao Zhang ◽  
Ge Qu ◽  
Seok-Heon Jung ◽  
...  

2019 ◽  
Vol 114 (20) ◽  
pp. 202902 ◽  
Author(s):  
Qiang Li ◽  
Aihua Zhang ◽  
Dong Gao ◽  
Min Guo ◽  
Jiajun Feng ◽  
...  

2006 ◽  
Vol 130 (1-3) ◽  
pp. 184-188 ◽  
Author(s):  
W. Hahn ◽  
M. Boshta ◽  
K. Bärner ◽  
R. Braunstein

1996 ◽  
Vol 68 (12) ◽  
pp. 1717-1719 ◽  
Author(s):  
M. Covington ◽  
R. Scheuerer ◽  
K. Bloom ◽  
L. H. Greene

2000 ◽  
Vol 14 (25n27) ◽  
pp. 3012-3019
Author(s):  
V. DALLACASA ◽  
P. DI SIA

We have investigated the consequences of internal fields on transport properties in insulators close to a metal-insulator-superconductor transition. An interpolation formula for the resistivity as a function of temperature describing insulating, metallic and superconducting regimes has been deduced in the framework of a quantum percolation model in which hopping processes on localised states occur. The contribution to the internal fields on carriers has been taken into account up to quadrupole terms. The resistivity follows a law ρ ∪(T0)δ T e(T0/T)1/2 where T0 corresponds to a coulomb gap and exhibits anisotropic quadrupole angular dependence, suggesting a correlation with the pseudo-gap observed in superconductors in the underdoped regime.


1998 ◽  
Vol 58 (24) ◽  
pp. 16110-16117 ◽  
Author(s):  
K. M. Lui ◽  
W. H. Wong ◽  
K. P. Chik

2015 ◽  
Vol 53 (20) ◽  
pp. 1431-1439 ◽  
Author(s):  
S. Raj Mohan ◽  
M. P. Joshi ◽  
C. Shalu ◽  
C. Ghosh ◽  
C. Mukharjee ◽  
...  

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