Improving the charge injection in bottom contact organic transistor by carbon electrodes

The electrode/organic semiconductor interface in OFETs is critical to device performance. Traditional metal electrodes often produce unfavorable interfacial dipole when they are in contact with organic semiconductors, inducing a larger...

Interface Engineering Improves the Performance of Green Perovskite Light-emitting Diodes

To realize high-performance perovskite light-emitting diodes (PeLEDs), the underlying charge transport layer plays a vital role in charge injection and perovskite growth. Herein, a rational interface engineering method has been...

A Hydrogel-Based Microfluidic Nerve Cuff for Neuromodulation of Peripheral Nerves

Implantable neuromodulation devices typically have metal in contact with soft, ion-conducting nerves. These neural interfaces excite neurons using short-duration electrical pulses. While this approach has been extremely successful for multiple clinical applications, it is limited in delivering long-duration pulses or direct current (DC), even for acute term studies. When the charge injection capacity of electrodes is exceeded, irreversible electrochemical processes occur, and toxic byproducts are discharged directly onto the nerve, causing biological damage. Hydrogel coatings on electrodes improve the overall charge injection limit and provide a mechanically pliable interface. To further extend this idea, we developed a silicone-based nerve cuff lead with a hydrogel microfluidic conduit. It serves as a thin, soft and flexible interconnection and provides a greater spatial separation between metal electrodes and the target nerve. In an in vivo rat model, we used this cuff to stimulate and record from sciatic nerves, with performance comparable to that of metal electrodes. Further, we delivered DC through the lead in an acute manner to induce nerve block that is reversible. In contrast to most metallic cuff electrodes, which need microfabrication equipment, we built this cuff using a consumer-grade digital cutter and a simplified molding process. Overall, the device will be beneficial to neuromodulation researchers as a general-purpose nerve cuff electrode for peripheral neuromodulation experiments.

Characterisation of analogue front end and time walk in CMOS active pixel sensor

In this work we investigated a method to determine time walk in an active silicon pixel sensor prototype using Edge-TCT with infrared laser charge injection. Samples were investigated before and after neutron irradiation to 5· 10^14n_ eq/cm^2. Threshold, noise and calibration of the analogue front end were determined with external charge injection. A spatially sensitive measurement of collected charge and time walk was carried out with Edge-TCT, showing a uniform charge collection and output delay in pixel centre. On pixel edges charge sharing was observed due to finite beam width resulting in smaller signals and larger output delay. Time walk below 25 ns was observed for charge above 2000 e^- at a threshold above the noise level. Time walk measurement with external charge injection yielded identical results.

Ultralow dark current in near-infrared perovskite photodiodes by reducing charge injection and interfacial charge generation

Metal halide perovskite photodiodes (PPDs) offer high responsivity and broad spectral sensitivity, making them attractive for low-cost visible and near-infrared sensing. A significant challenge in achieving high detectivity in PPDs is lowering the dark current density (JD) and noise current (in). This is commonly accomplished using charge-blocking layers to reduce charge injection. By analyzing the temperature dependence of JD for lead-tin based PPDs with different bandgaps and electron-blocking layers (EBL), we demonstrate that while EBLs eliminate electron injection, they facilitate undesired thermal charge generation at the EBL-perovskite interface. The interfacial energy offset between the EBL and the perovskite determines the magnitude and activation energy of JD. By increasing this offset we realized a PPD with ultralow JD and in of 5 × 10−8 mA cm−2 and 2 × 10−14 A Hz−1/2, respectively, and wavelength sensitivity up to 1050 nm, establishing a new design principle to maximize detectivity in perovskite photodiodes.