Ultrafast plasmonic lasing from a metal/semiconductor interface

Nanoscale ◽  
2020 ◽  
Vol 12 (31) ◽  
pp. 16403-16408 ◽  
Author(s):  
Jian Wang ◽  
Xiaohao Jia ◽  
Zhaotong Wang ◽  
Weilong Liu ◽  
Xiaojun Zhu ◽  
...  
Keyword(s):  
Semiconductor Interface ◽  
Nanowire Lasers ◽  
Lasing Dynamics

Non-hybridized plasmonic nanowire lasers demonstrate ultrafast lasing dynamics and a comparable threshold to their hybrid counterparts.

Ultrafast Upconversion Probing of Lasing Dynamics in Single ZnO Nanowire Lasers

2008 ◽  
Vol 112 (5) ◽  
pp. 1679-1684 ◽  
Author(s):  
Jae Kyu Song ◽  
Ulrike Willer ◽  
Jodi M. Szarko ◽  
Stephen R. Leone ◽  
Shihong Li ◽  
...  
Keyword(s):  
Zno Nanowire ◽  
Nanowire Lasers ◽  
Lasing Dynamics

SURFACE MODES AT A FERRITE-SEMICONDUCTOR INTERFACE

1984 ◽  
Vol 45 (C5) ◽  
pp. C5-275-C5-284
Author(s):  
A. D. Boardman ◽  
A. K. Irving
Keyword(s):  
Semiconductor Interface ◽  
Surface Modes

Incoherent spin current

2017 ◽  
Author(s):  
K. Ando ◽  
E. Saitoh
Keyword(s):  
Diffusion Equation ◽  
Spin Density ◽  
Spin Diffusion ◽  
Spin Injection ◽  
Spin Current ◽  
Ferromagnetic Semiconductor ◽  
Electrochemical Potential ◽  
Semiconductor Interface ◽  
Interface Resistance ◽  
Inhomogeneous Spin

This chapter introduces the concept of incoherent spin current. A diffusive spin current can be driven by spatial inhomogeneous spin density. Such spin flow is formulated using the spin diffusion equation with spin-dependent electrochemical potential. The chapter also proposes a solution to the problem known as the conductivity mismatch problem of spin injection into a semiconductor. A way to overcome the problem is by using a ferromagnetic semiconductor as a spin source; another is to insert a spin-dependent interface resistance at a metal–semiconductor interface.

Effect of Fe atomic layers at the ferromagnet–semiconductor interface on temperature-dependent spin transport in semiconductors

2021 ◽  
Vol 129 (18) ◽  
pp. 183901
Author(s):  
M. Yamada ◽  
Y. Shiratsuchi ◽  
H. Kambe ◽  
K. Kudo ◽  
S. Yamada ◽  
...  
Keyword(s):  
Spin Transport ◽  
Temperature Dependent ◽  
Semiconductor Interface

scholarly journals Low-threshold strain-compensated InGaAs/(In,Al)GaAs multi-quantum well nanowire lasers emitting near 1.3 μm at room temperature

2021 ◽  
Vol 118 (22) ◽  
pp. 221103
Author(s):  
P. Schmiedeke ◽  
A. Thurn ◽  
S. Matich ◽  
M. Döblinger ◽  
J. J. Finley ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Threshold Strain ◽  
Low Threshold ◽  
Nanowire Lasers ◽  
Multi Quantum Well
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