A seed-mediated and double shell strategy to realize large-size ZnSe/ZnS/ZnS quantum dots for high color purity blue light-emitting diodes

Nanoscale ◽  
2021 ◽  
Author(s):  
Zhiwen Yang ◽  
Qianqian Wu ◽  
Xiaochuan Zhou ◽  
Fan Cao ◽  
Xuyong Yang ◽  
...  

Blue ZnSe/ZnS/ZnS quantum dots were prepared using a seed-mediated and double shell strategy, and the quantum dot-based light-emitting diode with electroluminescence spectrum peaked at 446 nm and full widths at half-maximum of 16 nm was fabricated.

2021 ◽  
Vol 52 (1) ◽  
pp. 953-956
Author(s):  
Tatsuya Ryowa ◽  
Yusuke Sakakibara ◽  
Tadashi Kobashi ◽  
Keisuke Kitano ◽  
Masaya Ueda ◽  
...  

Author(s):  
Jae-In Yoo ◽  
Suk-Ho Song ◽  
Jae-Peel Chung ◽  
Zhang Yi ◽  
Sung-Jae Park ◽  
...  

2019 ◽  
Vol 6 (10) ◽  
pp. 2009-2015 ◽  
Author(s):  
Zhiwen Yang ◽  
Qianqian Wu ◽  
Gongli Lin ◽  
Xiaochuan Zhou ◽  
Weijie Wu ◽  
...  

An all-solution processed inverted green quantum dot-based light-emitting diode with concurrent high efficiency and long lifetime is obtained by precisely controlled double shell growth of quantum dots.


2010 ◽  
Vol 13 (11) ◽  
pp. J132
Author(s):  
Ying-Nan Lai ◽  
Wei-Chou Hsu ◽  
Ching-Sung Lee ◽  
Ching-Wu Wang ◽  
Chiu-Sheng Ho ◽  
...  

2021 ◽  
Author(s):  
Fengjia Fan ◽  
Yan Gao ◽  
Xiaonan Liu ◽  
Bo Li ◽  
Huaibin Shen ◽  
...  

Abstract Ever since the first proposal of using colloidal quantum dots (QDs) as the active emitting layer of light-emitting diode (LED), a monolayer of QD is considered as a better option than the multilayer ones. Owing to the slow charge transport rate among different QD layers, quantum dot light-emitting diodes (QLEDs) adopting multilayer QDs need to be driven at higher than the bandgap bias voltage to achieve practically useful brightness, resulting in increased power consumptions and heat generations, and reduced device lifetimes. Unfortunately, QLEDs using monolayer QDs always suffer from unwanted recombination in hole transport layers (HTLs) and low external quantum efficiencies (EQEs) as a result of electron overflow from QDs into HTLs. Herein, we tackle this dilemma by packing QDs with large size into monolayers, which enables us to mitigate the unwanted electron overflow and retain high EQE. More importantly, it further allows us to boost the irradiative recombination current at bandgap voltage. By virtue of simultaneously obtained high EQE and irradiative recombination rate, we can achieve brightness of 1,100 cd m-2 and 3,000 cd m-2 at 100% and 105% bandgap voltages with record high power conversion efficiencies (PCEs) of 23% and 22%, respectively. Since heat generation has been depressed and devices can be operated at reduced bias voltage, they show unprecedented T95 operation lifetimes (the time for the luminance to decrease to 95% of the initial value) of more than 4,000 h with an initial brightness of 3,000 cd m-2, and equivalent T95 lifetimes of more than 20,000 h at 1,000 cd m-2.


Author(s):  
Zhiyuan Li ◽  
Xuhui Zhang ◽  
Ji Wu ◽  
Rui Guo ◽  
Lan Luo ◽  
...  

Non-rare-earth Mn4+-doped oxide red phosphors received increasing attention in the white light-emitting diode (LED) field for their admirable chemical stability and spectral properties. Here, a new inequivalent double-site substituted Mn4+-doped...


2016 ◽  
Vol 34 ◽  
pp. 276-283 ◽  
Author(s):  
Nidhi Gupta ◽  
Rakhi Grover ◽  
Dalip Singh Mehta ◽  
Kanchan Saxena

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