scholarly journals Enhanced reliability of phase-change memory via modulation of local structure and chemical bonding by incorporating carbon in Ge2Sb2Te5

RSC Advances ◽  
2021 ◽  
Vol 11 (36) ◽  
pp. 22479-22488
Author(s):  
Jeong Hwa Han ◽  
Hun Jeong ◽  
Hanjin Park ◽  
Hoedon Kwon ◽  
Dasol Kim ◽  
...  

Charge density differences (CDDs) on Ge–C–Sb bonds in CGST(5%) and Ge–C–Sb in CGST(10%).

2020 ◽  
Vol 12 (33) ◽  
pp. 37285-37294 ◽  
Author(s):  
Soobin Hwang ◽  
Hanjin Park ◽  
Dasol Kim ◽  
Hyeonwook Lim ◽  
Changwoo Lee ◽  
...  

2020 ◽  
Vol 8 (11) ◽  
pp. 3646-3654 ◽  
Author(s):  
Yuxing Zhou ◽  
Liang Sun ◽  
Getasew M. Zewdie ◽  
Riccardo Mazzarello ◽  
Volker L. Deringer ◽  
...  

The bonding contrast between Y–Sb–Te and Sc–Sb–Te phase-change memory materials, rendering the two alloys for different types of memory applications, is clarified through orbital-based chemical bonding analyses and structural similarity kernels.


Author(s):  
I. Giannopoulos ◽  
A. Sebastian ◽  
M. Le Gallo ◽  
V.P. Jonnalagadda ◽  
M. Sousa ◽  
...  

Author(s):  
S. R. Nandakumar ◽  
Irem Boybat ◽  
Jin-Ping Han ◽  
Stefano Ambrogio ◽  
Praneet Adusumilli ◽  
...  

2016 ◽  
Vol 49 (2) ◽  
pp. 18-26 ◽  
Author(s):  
Biplob Debnath ◽  
Alireza Haghdoost ◽  
Asim Kadav ◽  
Mohammed G. Khatib ◽  
Cristian Ungureanu

2020 ◽  
Vol 19 ◽  
pp. 820-828
Author(s):  
Nafisa Noor ◽  
Sadid Muneer ◽  
Raihan Sayeed Khan ◽  
Anna Gorbenko ◽  
Helena Silva

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