Exploiting Resistance Drift Characteristics to Improve Reliability of LDPC-Assisted Phase-Change Memory

2021 ◽  
pp. 1-1
Author(s):  
Meng Zhang ◽  
Fei Wu ◽  
Qin Yu ◽  
Weihua Liu ◽  
Ruixiang Ma ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Improve Reliability ◽  
Change Memory

Large Resistance Ratio for High Reliability of Multi-Level Storage in Phase-Change Memory

2010 ◽  
Vol 459 ◽  
pp. 140-144 ◽  
Author(s):  
You Yin ◽  
Tomoyuki Noguchi ◽  
Hiroki Ohno ◽  
Sumio Hosaka
Keyword(s):  
Phase Change ◽  
High Reliability ◽  
Phase Change Memory ◽  
High Ratio ◽  
Experimental Results ◽  
Resistance Level ◽  
Multi Level ◽  
Critical Characteristics ◽  
Improve Reliability ◽  
Change Memory

Reliability (or stability) of multi-level storage (MLS) is the critical characteristics for multi-level cells. In order to improve reliability of MLS of phase-change memory, there are two effective approaches, (i) enlargement of the ratio between resistance levels and (ii) reduction of scattering of resistance level. On the basis of our experimental results, it is demonstrated that the Ge2Sb2Te5-based double-layered cell has a high ratio of highest to lowest levels up to two-to-three orders of magnitude, implying high reliability. The cells exhibit the possibility of stable switching for four-level storage.

scholarly journals 8-bit Precision In-Memory Multiplication with Projected Phase-Change Memory

2018 ◽  
Author(s):  
I. Giannopoulos ◽  
A. Sebastian ◽  
M. Le Gallo ◽  
V.P. Jonnalagadda ◽  
M. Sousa ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Change Memory

Precision of synaptic weights programmed in phase-change memory devices for deep learning inference

2020 ◽  
Author(s):  
S. R. Nandakumar ◽  
Irem Boybat ◽  
Jin-Ping Han ◽  
Stefano Ambrogio ◽  
Praneet Adusumilli ◽  
...  
Keyword(s):  
Deep Learning ◽  
Phase Change ◽  
Phase Change Memory ◽  
Memory Devices ◽  
Change Memory

scholarly journals Enhanced reliability of phase-change memory via modulation of local structure and chemical bonding by incorporating carbon in Ge2Sb2Te5

RSC Advances ◽  
2021 ◽  
Vol 11 (36) ◽  
pp. 22479-22488
Author(s):  
Jeong Hwa Han ◽  
Hun Jeong ◽  
Hanjin Park ◽  
Hoedon Kwon ◽  
Dasol Kim ◽  
...  
Keyword(s):  
Phase Change ◽  
Charge Density ◽  
Chemical Bonding ◽  
Local Structure ◽  
Phase Change Memory ◽  
Change Memory

Charge density differences (CDDs) on Ge–C–Sb bonds in CGST(5%) and Ge–C–Sb in CGST(10%).

Revisiting Hash Table Design for Phase Change Memory

2016 ◽  
Vol 49 (2) ◽  
pp. 18-26 ◽  
Author(s):  
Biplob Debnath ◽  
Alireza Haghdoost ◽  
Asim Kadav ◽  
Mohammed G. Khatib ◽  
Cristian Ungureanu
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Hash Table ◽  
Change Memory

scholarly journals Enhancing Programming Variability in Multi-Bit Phase Change Memory Cells for Security

2020 ◽  
Vol 19 ◽  
pp. 820-828
Author(s):  
Nafisa Noor ◽  
Sadid Muneer ◽  
Raihan Sayeed Khan ◽  
Anna Gorbenko ◽  
Helena Silva
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Memory Cells ◽  
Change Memory
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