2018 IEEE International Electron Devices Meeting (IEDM)
Latest Publications

TOTAL DOCUMENTS

236

(FIVE YEARS 0)

H-INDEX

14

(FIVE YEARS 0)

Published By IEEE

9781728119878

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Steep Slope p-type 2D WSe2 Field-Effect Transistors with Van Der Waals Contact and Negative Capacitance

2018 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2018.8614493 ◽

2018 ◽

Author(s):

Jingli Wang ◽

Xuyun Guo ◽

Zhihao Yu ◽

Zichao Ma ◽

Yanghui Liu ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Van Der Waals ◽

Steep Slope ◽

Negative Capacitance ◽

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Atomristors: Memory Effect in Atomically-thin Sheets and Record RF Switches

2018 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2018.8614602 ◽

2018 ◽

Author(s):

Ruijing Ge ◽

Xiaohan Wu ◽

Myungsoo Kim ◽

Po-An Chen ◽

Jianping Shi ◽

...

Keyword(s):

Memory Effect ◽

Thin Sheets ◽

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Understanding the intrinsic reliability behavior of $\boldsymbol{n}$ -/$\boldsymbol{p}$-Si and $\boldsymbol{p}$-Ge nanowire FETs utilizing degradation maps

2018 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2018.8614542 ◽

2018 ◽

Author(s):

Adrian Chasin ◽

Erik Bury ◽

Jacopo Franco ◽

Ben Kaczer ◽

Michiel Vandemaele ◽

...

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Microstructure Evolution and Effect on Resistivity for Cu Nanointerconnects and Beyond

2018 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2018.8614547 ◽

2018 ◽

Author(s):

Szu-Tung Hu ◽

Linjun Cao ◽

Laura Spinella ◽

Paul S. Ho

Keyword(s):

Microstructure Evolution

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Interchangeable Hebbian and Anti-Hebbian STDP Applied to Supervised Learning in Spiking Neural Network

2018 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2018.8614648 ◽

2018 ◽

Author(s):

Che-Chia Chang ◽

Pin-Chun Chen ◽

Boris Hudec ◽

Po-Tsun Liu ◽

Tuo-Hung Hou

Keyword(s):

Neural Network ◽

Supervised Learning ◽

Spiking Neural Network

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Analysis and Realization of TLC or even QLC Operation with a High Performance Multi-times Verify Scheme in 3D NAND Flash memory

2018 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2018.8614548 ◽

2018 ◽

Author(s):

C.C. Lu ◽

C. C. Cheng ◽

H.P. Chiu ◽

W.L. Lin ◽

T.W. Chen ◽

...

Keyword(s):

Flash Memory ◽

High Performance ◽

Nand Flash Memory

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First experimental demonstration of a scalable linear majority gate based on spin waves

2018 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2018.8614488 ◽

2018 ◽

Author(s):

Florin Ciubotaru ◽

Giacomo Talmelli ◽

Thibaut Devolder ◽

Odysseas Zografos ◽

Marc Heyns ◽

...

Keyword(s):

Experimental Demonstration ◽

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A Physics-based Thermal Model of Nanosheet MOSFETs for Device-Circuit Co-design

2018 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2018.8614576 ◽

2018 ◽

Author(s):

Linlin Cai ◽

Wangyong Chen ◽

Pengying Chang ◽

Gang Du ◽

Xing Zhang ◽

...

Keyword(s):

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Effects of Basal Plane Dislocations on SiC Power Device Reliability

2018 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2018.8614623 ◽

2018 ◽

Author(s):

R. E. Stahlbush ◽

K. N. A. Mahakik ◽

A. J. Lelis ◽

R. Green

Keyword(s):

Basal Plane ◽

Power Device ◽

Device Reliability

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SiC-FET-type NOx Sensor for High-Temperature Exhaust Gas

2018 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2018.8614631 ◽

2018 ◽

Author(s):

Y. Sasago ◽

H. Nakamura ◽

T. Odaka ◽

A. Isobe ◽

S. Komatsu ◽

...

Keyword(s):

High Temperature ◽

Exhaust Gas ◽

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