High-temperature excitons and enhanced electroabsorption in InGaAs/InAlAs multiple quantum wells

1985 ◽  
Vol 21 (13) ◽  
pp. 574 ◽  
Author(s):  
K. Wakita ◽  
Y. Kawamura ◽  
Y. Yoshikuni ◽  
H. Asahi
2017 ◽  
Vol 10 (2) ◽  
pp. 021002 ◽  
Author(s):  
Hideaki Murotani ◽  
Katsuto Nakamura ◽  
Tomonori Fukuno ◽  
Hideto Miyake ◽  
Kazumasa Hiramatsu ◽  
...  

CrystEngComm ◽  
2021 ◽  
Author(s):  
Yu Guo ◽  
Huanqing Chen ◽  
Rui Lang ◽  
Menglai Lei ◽  
Hua Zong ◽  
...  

Maintaining crystal quality during the growth of very thick multiple-quantum-wells is challenging due to the progressive deterioration in thick low-temperature barriers. The insertion of several high-temperature crystallinity restoring (CR) layers...


2004 ◽  
Vol 264 (1-3) ◽  
pp. 159-164 ◽  
Author(s):  
Yang Liu ◽  
Takashi Egawa ◽  
Hiroyasu Ishikawa ◽  
Hao Jiang ◽  
Baijun Zhang ◽  
...  

2011 ◽  
Vol 8 (7-8) ◽  
pp. 2016-2018 ◽  
Author(s):  
Toshiki Hikosaka ◽  
Tomonari Shioda ◽  
Yoshiyuki Harada ◽  
Koichi Tachibana ◽  
Naoharu Sugiyama ◽  
...  

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-511-C5-515 ◽  
Author(s):  
J. L. OUDAR ◽  
J. DUBARD ◽  
F. ALEXANDRE ◽  
D. HULIN ◽  
A. MIGUS ◽  
...  

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-239-C5-242 ◽  
Author(s):  
E. GLASER ◽  
B. V. SHANABROOK ◽  
R. J. WAGNER ◽  
R. L. HAWKINS ◽  
W. J. MOORE ◽  
...  

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