Effect of high temperature and interface treatments on photoluminescence from InGaN/GaN multiple quantum wells with green light emissions

2003 ◽  
Vol 83 (5) ◽  
pp. 914-916 ◽  
Author(s):  
W. Liu ◽  
S. J. Chua ◽  
X. H. Zhang ◽  
J. Zhang
Keyword(s):  
High Temperature ◽  
Quantum Wells ◽  
Green Light ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

High-temperature photoluminescence and photoluminescence excitation spectroscopy of Al0.60Ga0.40N/Al0.70Ga0.30N multiple quantum wells

2017 ◽  
Vol 10 (2) ◽  
pp. 021002 ◽  
Author(s):  
Hideaki Murotani ◽  
Katsuto Nakamura ◽  
Tomonori Fukuno ◽  
Hideto Miyake ◽  
Kazumasa Hiramatsu ◽  
...  
Keyword(s):  
High Temperature ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Photoluminescence Excitation

Control of Barrier Width in Perovskite Multiple Quantum Wells for High Performance Green Light–Emitting Diodes

2018 ◽  
Vol 7 (3) ◽  
pp. 1801575 ◽  
Author(s):  
Maotao Yu ◽  
Chang Yi ◽  
Nana Wang ◽  
Liangdong Zhang ◽  
Renmeng Zou ◽  
...  
Keyword(s):  
Quantum Wells ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Barrier Width ◽  
Light Emitting

Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells

2014 ◽  
Vol 115 (8) ◽  
pp. 083112 ◽  
Author(s):  
Zhi Li ◽  
Junjie Kang ◽  
Bo Wei Wang ◽  
Hongjian Li ◽  
Yu Hsiang Weng ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Carrier Localization ◽  
Light Emitting

High-temperature excitons and enhanced electroabsorption in InGaAs/InAlAs multiple quantum wells

1985 ◽  
Vol 21 (13) ◽  
pp. 574 ◽  
Author(s):  
K. Wakita ◽  
Y. Kawamura ◽  
Y. Yoshikuni ◽  
H. Asahi
Keyword(s):  
High Temperature ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum
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