High-temperature photoluminescence and photoluminescence excitation spectroscopy of Al0.60Ga0.40N/Al0.70Ga0.30N multiple quantum wells

2017 ◽  
Vol 10 (2) ◽  
pp. 021002 ◽  
Author(s):  
Hideaki Murotani ◽  
Katsuto Nakamura ◽  
Tomonori Fukuno ◽  
Hideto Miyake ◽  
Kazumasa Hiramatsu ◽  
...  
Keyword(s):  
High Temperature ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Photoluminescence Excitation

High-temperature excitons and enhanced electroabsorption in InGaAs/InAlAs multiple quantum wells

1985 ◽  
Vol 21 (13) ◽  
pp. 574 ◽  
Author(s):  
K. Wakita ◽  
Y. Kawamura ◽  
Y. Yoshikuni ◽  
H. Asahi
Keyword(s):  
High Temperature ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

Unintentional indium incorporation into barriers of InGaN/GaN multiple quantum wells studied by photoreflectance and photoluminescence excitation spectroscopy

2016 ◽  
Vol 120 (1) ◽  
pp. 015703 ◽  
Author(s):  
Stefan Freytag ◽  
Martin Feneberg ◽  
Christoph Berger ◽  
Jürgen Bläsing ◽  
Armin Dadgar ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Photoluminescence Excitation

High-temperature crystallinity restoring layers and their optimal positions for ultra-thick InGaN/GaN multiple-quantum-well structures

CrystEngComm ◽  
2021 ◽  
Author(s):  
Yu Guo ◽  
Huanqing Chen ◽  
Rui Lang ◽  
Menglai Lei ◽  
Hua Zong ◽  
...  
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Quantum Well ◽  
Quantum Wells ◽  
Multiple Quantum Well ◽  
Crystal Quality ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Progressive Deterioration

Maintaining crystal quality during the growth of very thick multiple-quantum-wells is challenging due to the progressive deterioration in thick low-temperature barriers. The insertion of several high-temperature crystallinity restoring (CR) layers...

High-temperature-grown quaternary AlInGaN epilayers and multiple quantum wells for ultraviolet emission

2004 ◽  
Vol 264 (1-3) ◽  
pp. 159-164 ◽  
Author(s):  
Yang Liu ◽  
Takashi Egawa ◽  
Hiroyasu Ishikawa ◽  
Hao Jiang ◽  
Baijun Zhang ◽  
...  
Keyword(s):  
High Temperature ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Ultraviolet Emission

Impact of InGaN growth conditions on structural stability under high temperature process in InGaN/GaN multiple quantum wells

2011 ◽  
Vol 8 (7-8) ◽  
pp. 2016-2018 ◽  
Author(s):  
Toshiki Hikosaka ◽  
Tomonari Shioda ◽  
Yoshiyuki Harada ◽  
Koichi Tachibana ◽  
Naoharu Sugiyama ◽  
...  
Keyword(s):  
High Temperature ◽  
Quantum Wells ◽  
Structural Stability ◽  
Growth Conditions ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
High Temperature Process

Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire

2014 ◽  
Vol 115 (11) ◽  
pp. 113106 ◽  
Author(s):  
D. Kundys ◽  
S. Schulz ◽  
F. Oehler ◽  
D. Sutherland ◽  
T. J. Badcock ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Photoluminescence Excitation
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