Optical switching in an asymmetric Fabry–Perot with high contrast ratio and very low insertion loss

1991 ◽  
Vol 27 (8) ◽  
pp. 659 ◽  
Author(s):  
J.F. Heffernan ◽  
M.H. Moloney ◽  
J. Hegarty ◽  
J.S. Roberts
Keyword(s):  
Insertion Loss ◽  
Optical Switching ◽  
Contrast Ratio ◽  
High Contrast ◽  
Fabry Perot ◽  
Low Insertion Loss

High tolerances for a low-voltage, high-contrast, low-insertion-loss asymmetric Fabry-Perot modulator

1991 ◽  
Vol 3 (8) ◽  
pp. 733-735 ◽  
Author(s):  
P. Zouganeli ◽  
M. Whitehead ◽  
P.J. Stevens ◽  
A.W. Rivers ◽  
G. Parry ◽  
...  
Keyword(s):  
Insertion Loss ◽  
Low Voltage ◽  
High Contrast ◽  
Fabry Perot ◽  
Low Insertion Loss

High contrast ratio asymmetric Fabry–Perot reflection light modulator based on GaAs/InGaAs multiple quantum wells

1991 ◽  
Vol 59 (9) ◽  
pp. 1108-1110 ◽  
Author(s):  
Kezhong Hu ◽  
Li Chen ◽  
Anupam Madhukar ◽  
Ping Chen ◽  
K. C. Rajkumar ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Contrast Ratio ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
High Contrast ◽  
Light Modulator ◽  
Fabry Perot

A GaAs/AlGaAs asymmetric Fabry-Perot reflection modulator with very high contrast ratio

1993 ◽  
Vol 5 (1) ◽  
pp. 55-58 ◽  
Author(s):  
D.S. Gerber ◽  
R. Droopad ◽  
G.N. Maracas
Keyword(s):  
Contrast Ratio ◽  
High Contrast ◽  
Fabry Perot ◽  
Very High

High contrast ratio self‐electro‐optic effect devices based on inverted InGaAs/GaAs asymmetric Fabry–Perot modulator

1992 ◽  
Vol 60 (4) ◽  
pp. 422-424 ◽  
Author(s):  
Li Chen ◽  
Kezhong Hu ◽  
R. M. Kapre ◽  
A. Madhukar
Keyword(s):  
Contrast Ratio ◽  
High Contrast ◽  
Electro Optic ◽  
Fabry Perot

ALL-OPTICAL ASYMMETRIC FABRY-PEROT REFLECTION MODULATORS

1993 ◽  
Vol 02 (03) ◽  
pp. 391-399 ◽  
Author(s):  
T. OHTSUKI ◽  
M.F. KROL ◽  
G. KHITROVA ◽  
R. JIN ◽  
R.K. BONCEK ◽  
...  
Keyword(s):  
Response Time ◽  
Quantum Wells ◽  
Insertion Loss ◽  
Pump Beam ◽  
Carrier Density ◽  
Carrier Lifetime ◽  
Contrast Ratio ◽  
Operating Conditions ◽  
Fabry Perot ◽  
All Optical

Operating conditions of all-optical asymmetric Fabry-Perot modulators are discussed based on the experimental results of two modulators with different nonlinear spacers of GaAlInAs/AlInAs and strained-layer InGaAs/GaAs multi-quantum wells. These modulators operate at wavelengths of 1.3 and 0.92 µm, and offer an on/off contrast ratio of greater than 1000:1. An “on” state with an insertion loss of 2.2 dB existed for pump intensities of 30 kW/cm 2 and 3 kW/cm 2, respectively. The corresponding carrier densities for these pump intensities are approximately the same, at 4×1017 cm –3. The switching pump beam intensity of the modulator and its response time are analyzed in terms of saturation carrier density and carrier lifetime of the nonlinear spacer material. Requirements for the nonlinear spacer material and device parameters are discussed for low power and fast modulators.

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