Lead zirconate titanate thin films for microwave device applications

ABSTRACTFerroelectric thin films of the lead zirconate titanate family have been integrated with silicon-based micromachined structures in the fabrication of microelectromechanical devices. Sol-gel deposition techniques have been applied in the formation of ferroelectric thin films with high piezoelectric and pyroelectric coefficients for physical forces sensors and infrared detectors, respectively. Knowledge of both electrical and mechanical properties is important in realizing microelectromechanical devices with predictable performance. This pape reports piezoelectric coefficient, pyroelectric coefficient, dielectric constant, and Young's modulus for lead zirconate titanate and lead titanate thin films.

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Failure Mechanisms of Lead Zirconate Titanate Thin Films during Electromechanical Loading

2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF) ◽

10.1109/ifcs-isaf41089.2020.9234833 ◽

2020 ◽

Author(s):

Kathleen Coleman ◽

Julian Walker ◽

Wanlin Zhu ◽

Song Won Ko ◽

Peter Mardilovich ◽

...

Keyword(s):

Thin Films ◽

Lead Zirconate Titanate ◽

Failure Mechanisms ◽

Lead Zirconate ◽

Zirconate Titanate ◽

Electromechanical Loading

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Characteristics of Sputtered Lead Zirconate Titanate Thin Films with Different Layer Configurations and Large Thickness

IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control ◽

10.1109/tuffc.2020.3039230 ◽

2020 ◽

pp. 1-1

Author(s):

Kensuke Kanda ◽

Tsukasa Koyama ◽

Takeshi Yoshimura ◽

Shinichi Murakami ◽

Kazusuke Maenaka

Keyword(s):

Thin Films ◽

Lead Zirconate Titanate ◽

Lead Zirconate ◽

Large Thickness ◽

Zirconate Titanate

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Improvement of Ferroelectric Properties of Lead Zirconate Titanate Thin Films by Ion-substitution using Rare-earth Cations

MRS Proceedings ◽

10.1557/proc-830-d3.3 ◽

2004 ◽

Vol 830 ◽

Author(s):

Hiroshi Nakaki ◽

Hiroshi Uchida ◽

Shoji Okamoto ◽

Shintaro Yokoyama ◽

Hiroshi Funakubo ◽

...

Keyword(s):

Thin Films ◽

Rare Earth ◽

Lead Zirconate Titanate ◽

Ferroelectric Property ◽

Ferroelectric Properties ◽

Lead Zirconate ◽

Crystal Anisotropy ◽

Pzt Film ◽

Zirconate Titanate ◽

Ion Substitution

ABSTRACTRare-earth-substituted tetragonal lead zirconate titanate thin films were synthesized for improving the ferroelectric property of conventional lead zirconate titanate. Thin films of Pb1.00REx (Zr0.40Ti0.60)1-(3x /4)O3 (x = 0.02, RE = Y, Dy, Er and Yb) were deposited on (111)Pt/Ti/SiO2/(100)Si substrates by a chemical solution deposition (CSD). B-site substitution using rare-earth cations described above enhanced the crystal anisotropy, i.e., ratio of PZT lattice parameters c/a. Remanent polarization (Pr) of PZT film was enhanced by Y3+-, Dy3+- and Er3+-substitution from 20 μC/cm2 up to 26, 25 and 26 μC/cm2 respectively, while ion substitution using Yb3+ degraded the Pr value down to 16 μC/cm2. These films had similar coercive fields (Ec) of around 100 kV/cm. Improving the ferroelectric property of PZT film by rare-earth-substitution would be ascribed to the enhancement of the crystal anisotropy. We concluded that ion substitution using some rare-earth cations, such as Y3+, Dy3+ or Er3+, is one of promising technique for improving the ferroelectric property of PZT film.

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