Improvement of Ferroelectric Properties of Lead Zirconate Titanate Thin Films by Ion-substitution using Rare-earth Cations

2004 ◽  
Vol 830 ◽  
Author(s):  
Hiroshi Nakaki ◽  
Hiroshi Uchida ◽  
Shoji Okamoto ◽  
Shintaro Yokoyama ◽  
Hiroshi Funakubo ◽  
...  
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Property ◽  
Ferroelectric Properties ◽  
Lead Zirconate ◽  
Crystal Anisotropy ◽  
Pzt Film ◽  
Zirconate Titanate ◽  
Ion Substitution

ABSTRACTRare-earth-substituted tetragonal lead zirconate titanate thin films were synthesized for improving the ferroelectric property of conventional lead zirconate titanate. Thin films of Pb1.00REx (Zr0.40Ti0.60)1-(3x /4)O3 (x = 0.02, RE = Y, Dy, Er and Yb) were deposited on (111)Pt/Ti/SiO2/(100)Si substrates by a chemical solution deposition (CSD). B-site substitution using rare-earth cations described above enhanced the crystal anisotropy, i.e., ratio of PZT lattice parameters c/a. Remanent polarization (Pr) of PZT film was enhanced by Y3+-, Dy3+- and Er3+-substitution from 20 μC/cm2 up to 26, 25 and 26 μC/cm2 respectively, while ion substitution using Yb3+ degraded the Pr value down to 16 μC/cm2. These films had similar coercive fields (Ec) of around 100 kV/cm. Improving the ferroelectric property of PZT film by rare-earth-substitution would be ascribed to the enhancement of the crystal anisotropy. We concluded that ion substitution using some rare-earth cations, such as Y3+, Dy3+ or Er3+, is one of promising technique for improving the ferroelectric property of PZT film.

Electrical Properties of Perovskite-Based Ferroelectric Thin Films Modified Using Rare-Earth Elements

2006 ◽  
Vol 320 ◽  
pp. 49-52
Author(s):  
Hiroshi Uchida ◽  
Hiroshi Nakaki ◽  
Hiroshi Funakubo ◽  
Seiichiro Koda
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Electrical Properties ◽  
Lead Zirconate Titanate ◽  
Remanent Polarization ◽  
Lead Zirconate ◽  
Solution Deposition ◽  
Si Substrates ◽  
Crystal Anisotropy ◽  
Insulating Properties

The electrical properties of perovskite-based ferroelectric films were improved by ion modification using rare-earth cations. Thin films of rare-earth-modified lead zirconate titanate [Pb(Zr,Ti)O3] were fabricated on (111)Pt/Ti/SiO2/(100)Si substrates by a chemical solution deposition technique. The substitution of volatile cations in the simple-perovskite oxides, such as Pb2+ in Pb(Zr,Ti)O3 films, enhanced the insulating properties of the film. The crystal anisotropy of the Pb(Zr,Ti)O3 film could be controlled by varying the species and the amount of replacing cations to enhance the spontaneous polarization. Thus, ion modification using Dy3+ cation could enhance the remanent polarization of Pb(Zr,Ti)O3 film consequently.

Ferroelectric properties of heterolayered lead zirconate titanate thin films

2006 ◽  
Vol 16 (4) ◽  
pp. 425-430 ◽  
Author(s):  
Fransiska Cecilia Kartawidjaja ◽  
Zhaohui Zhou ◽  
John Wang
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Properties ◽  
Lead Zirconate ◽  
Zirconate Titanate

Enhanced Spontaneous Polarization of Dysprosium-substituted Lead Zirconate Titanate Thin Films by a Chemical Solution Deposition Method

2004 ◽  
Vol 830 ◽  
Author(s):  
Hiroshi Uchida ◽  
Hiroshi Nakaki ◽  
Shoji Okamoto ◽  
Shintaro Yokoyama ◽  
Hiroshi Funakubo ◽  
...  
Keyword(s):  
Lead Zirconate Titanate ◽  
Spontaneous Polarization ◽  
Chemical Solution Deposition ◽  
Lead Zirconate ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Crystal Anisotropy ◽  
Pzt Film ◽  
Zirconate Titanate ◽  
Pzt Films

ABSTRACTInfluences of the B-site substitution using Dy3+ ion on the crystal structure and ferroelectric properties of lead zirconate titanate (PZT) films were investigated. Dy3+-substituted PZT films with nominal chemical compositions of Pb1.00Dyx (Zr0.40Ti0.60)1-(3x/4)O3 (x = 0 ∼ 0.06) were fabricated by a chemical solution deposition (CSD). Polycrystalline PZT films with preferential orientation of (111)PZT were obtained on (111)Pt/TiO2/SiO2/(100)Si substrates, while epitaxially-grown (111)PZT films were fabricated on (111)SrRuO3//(111)Pt//(100)YSZ//(100)Si substrate. Ratio of PZT lattice parameters (c/a), which corresponds to its crystal anisotropy, was enhanced by the Dy3+-substitution with x = 0.02. Spontaneous polarization (Ps) of Dy3+-substituted PZT film (x = 0.02) along polar [001] axis of PZT lattice was estimated from saturation polarization (Psat) value of the epitaxially-grown (111)PZT film on (111)SrRuO3//(111)Pt//(100)YSZ//(100)Si to be 84 μC/cm2 that was significantly larger than that of non-substituted PZT (= 71 μC/cm2). We concluded that the enhancement of Ps value could be achieved by the Dy3+-substitution that promoted the crystal anisotropy of PZT lattice.

The influence of niobium-doping on lead zirconate titanate ferroelectric thin films

1991 ◽  
Vol 69 (3-4) ◽  
pp. 260-264 ◽  
Author(s):  
E. M. Griswold ◽  
M. Sayer ◽  
D. T. Amm ◽  
I. D. Calder
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Properties ◽  
Lead Zirconate ◽  
Ferroelectric Thin Films ◽  
Crystallographic Structure ◽  
Niobium Content ◽  
Processing Technologies ◽  
Niobium Doping ◽  
Zirconate Titanate

Ferroelectric thin films have recently proven viable for nonvolatile memory applications in semiconductor technology. Current research is focused on the development of processing technologies and deposition on metallized semiconductor substrates. In this study, niobium-doped lead zirconate titanate thin films were prepared by a dc magnetron-sputtering technique using a multielement metal target. Films were deposited on indium tin oxide coated glass and on metallizations on silicon substrates. The crystallographic structure and surface morphology of the films was examined by scanning electron microscopy and X-ray diffraction as a function of processing variables such as sputtering pressure, film thickness, and niobium content. Electrical characterization of the films is discussed in terms of ferroelectric hysteresis and polarization properties. Improved ferroelectric properties are achieved through a densified structure resulting from niobium-doping.

Orientation Dependence of Strontium-doped Lead Zirconate Titanate (PSZT) Thin Films on RF Magnetron Sputtering Conditions

2006 ◽  
Vol 928 ◽  
Author(s):  
Sharath Sriram ◽  
Madhu Bhaskaran ◽  
Anthony Stephen Holland ◽  
Geoffrey K Reeves
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Cooling Rate ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Properties ◽  
Rf Magnetron Sputtering ◽  
Lead Zirconate ◽  
Orientation Dependence ◽  
Grain Structure ◽  
Zirconate Titanate

ABSTRACTStudies on strontium-doped lead zirconate titanate (PSZT) have been reported for its high piezoelectric and ferroelectric properties. For PSZT to exhibit pronounced piezoelectric behaviour it must have a crystalline grain structure (perovskite orientation). This paper is a study of the deposition of PSZT thin films by RF magnetron sputtering and the effect of cooling rate, after deposition at temperatures between 500 °C and 700 °C. X-Ray Diffraction (XRD) results are used to show how a cooling rate of 5 °C/min increases the degree of perovskite orientation in sputtered films, when compared to a cooling rate of 15 °C/min. The absence of significant shifts in the positions of diffraction peak patterns in XRD results are used to demonstrate low stress in the deposited films. Atomic Force Microscope (AFM) imaging is used to show the crystalline nature of the PSZT thin films.

Influence of Laser Fluence on Structural and Ferroelectric Properties of Lead-Zirconate-Titanate Thin Films Prepared by Laser Ablation

1991 ◽  
Vol 30 (Part 1, No. 9B) ◽  
pp. 2167-2169 ◽  
Author(s):  
Hideo Kidoh ◽  
Toshio Ogawa ◽  
Hideyuki Yashima ◽  
Akiharu Morimoto ◽  
Tatsuo Shimizu
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Lead Zirconate Titanate ◽  
Laser Fluence ◽  
Ferroelectric Properties ◽  
Lead Zirconate ◽  
Zirconate Titanate
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