Phase change memory: electrical circuit modelling, nanocrossbar performance analysis and applications

2019 ◽  
pp. 279-305
Keyword(s):  
Performance Analysis ◽  
Phase Change ◽  
Phase Change Memory ◽  
Electrical Circuit ◽  
Circuit Modelling ◽  
Change Memory

Performance Analysis of Spiking RBM with Measurement-Based Phase Change Memory Model

2019 ◽  
pp. 591-599
Author(s):  
Masatoshi Ishii ◽  
Megumi Ito ◽  
Wanki Kim ◽  
SangBum Kim ◽  
Akiyo Nomura ◽  
...  
Keyword(s):  
Performance Analysis ◽  
Phase Change ◽  
Phase Change Memory ◽  
Memory Model ◽  
Change Memory

A comparative performance analysis of phase change memory as main memory and DRAM

2021 ◽  
Author(s):  
Er.S. John Pimo ◽  
V. Ashok ◽  
T. Logeswaran ◽  
Damaraju Sri Sai Satyanarayana
Keyword(s):  
Performance Analysis ◽  
Phase Change ◽  
Phase Change Memory ◽  
Main Memory ◽  
Comparative Performance ◽  
Change Memory

scholarly journals 8-bit Precision In-Memory Multiplication with Projected Phase-Change Memory

2018 ◽  
Author(s):  
I. Giannopoulos ◽  
A. Sebastian ◽  
M. Le Gallo ◽  
V.P. Jonnalagadda ◽  
M. Sousa ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Change Memory

Precision of synaptic weights programmed in phase-change memory devices for deep learning inference

2020 ◽  
Author(s):  
S. R. Nandakumar ◽  
Irem Boybat ◽  
Jin-Ping Han ◽  
Stefano Ambrogio ◽  
Praneet Adusumilli ◽  
...  
Keyword(s):  
Deep Learning ◽  
Phase Change ◽  
Phase Change Memory ◽  
Memory Devices ◽  
Change Memory

scholarly journals Enhanced reliability of phase-change memory via modulation of local structure and chemical bonding by incorporating carbon in Ge2Sb2Te5

RSC Advances ◽  
2021 ◽  
Vol 11 (36) ◽  
pp. 22479-22488
Author(s):  
Jeong Hwa Han ◽  
Hun Jeong ◽  
Hanjin Park ◽  
Hoedon Kwon ◽  
Dasol Kim ◽  
...  
Keyword(s):  
Phase Change ◽  
Charge Density ◽  
Chemical Bonding ◽  
Local Structure ◽  
Phase Change Memory ◽  
Change Memory

Charge density differences (CDDs) on Ge–C–Sb bonds in CGST(5%) and Ge–C–Sb in CGST(10%).

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