VLSI and Post-CMOS Electronics. Volume 2: Devices, circuits and interconnects
Latest Publications

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Published By Institution Of Engineering And Technology

9781839530531, 9781839530548

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Design and analysis of variability aware FinFET-based SRAM circuit design

VLSI and Post-CMOS Electronics. Volume 2: Devices, circuits and interconnects ◽

10.1049/pbcs073g_ch6 ◽

2019 ◽

pp. 101-122

Keyword(s):

Circuit Design

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Assessment of SiGe/Si heterojunction tunnel field-effect transistor for digital VLSI circuit applications

VLSI and Post-CMOS Electronics. Volume 2: Devices, circuits and interconnects ◽

10.1049/pbcs073g_ch3 ◽

2019 ◽

pp. 47-62

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Vlsi Circuit ◽

Digital Vlsi ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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Methods to design ternary gates and adders

VLSI and Post-CMOS Electronics. Volume 2: Devices, circuits and interconnects ◽

10.1049/pbcs073g_ch14 ◽

2019 ◽

pp. 307-327

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Nanomagnetic computing for next generation interconnects and logic design

VLSI and Post-CMOS Electronics. Volume 2: Devices, circuits and interconnects ◽

10.1049/pbcs073g_ch8 ◽

2019 ◽

pp. 151-173 ◽

Cited By ~ 1

Keyword(s):

Logic Design ◽

Next Generation

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Prospective graphene-based through silicon vias in three-dimensional integrated circuits

VLSI and Post-CMOS Electronics. Volume 2: Devices, circuits and interconnects ◽

10.1049/pbcs073g_ch11 ◽

2019 ◽

pp. 223-246

Keyword(s):

Integrated Circuits ◽

Three Dimensional ◽

Through Silicon Vias ◽

Silicon Vias

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Prospective current mode approach for on-chip interconnects in integrated circuit designs

VLSI and Post-CMOS Electronics. Volume 2: Devices, circuits and interconnects ◽

10.1049/pbcs073g_ch9 ◽

2019 ◽

pp. 173-200

Keyword(s):

Integrated Circuit ◽

Current Mode ◽

On Chip

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Phase change memory: electrical circuit modelling, nanocrossbar performance analysis and applications

VLSI and Post-CMOS Electronics. Volume 2: Devices, circuits and interconnects ◽

10.1049/pbcs073g_ch13 ◽

2019 ◽

pp. 279-305

Keyword(s):

Performance Analysis ◽

Phase Change ◽

Phase Change Memory ◽

Electrical Circuit ◽

Circuit Modelling ◽

Change Memory

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Back Matter

VLSI and Post-CMOS Electronics. Volume 2: Devices, circuits and interconnects ◽

10.1049/pbcs073g_bm ◽

2019 ◽

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Front Matter

VLSI and Post-CMOS Electronics. Volume 2: Devices, circuits and interconnects ◽

10.1049/pbcs073g_fm ◽

2019 ◽

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Modelling interconnects for future VLSI circuit applications

VLSI and Post-CMOS Electronics. Volume 2: Devices, circuits and interconnects ◽

10.1049/pbcs073g_ch7 ◽

2019 ◽

pp. 125-150

Keyword(s):

Vlsi Circuit

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VLSI and Post-CMOS Electronics. Volume 2: Devices, circuits and interconnectsLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By Institution Of Engineering And Technology

Design and analysis of variability aware FinFET-based SRAM circuit design

Assessment of SiGe/Si heterojunction tunnel field-effect transistor for digital VLSI circuit applications

Methods to design ternary gates and adders

Nanomagnetic computing for next generation interconnects and logic design

Prospective graphene-based through silicon vias in three-dimensional integrated circuits

Prospective current mode approach for on-chip interconnects in integrated circuit designs

Phase change memory: electrical circuit modelling, nanocrossbar performance analysis and applications

Back Matter

Front Matter

Modelling interconnects for future VLSI circuit applications

VLSI and Post-CMOS Electronics. Volume 2: Devices, circuits and interconnects
Latest Publications