scholarly journals Peculiarities of admittance spectroscopy study of wide bandgap semiconductors on the example of diamond

2020 ◽  
Vol 161 ◽  
pp. 01107
Author(s):  
A V Solomnikova ◽  
V. A. Lukashkin ◽  
O V Derevianko

To improve the performance characteristics of power and high-frequency electronics, wide bandgap semiconductors are now widely used. This paper presents consideration of features arising during exploration of electronic characteristics of wide bandgap materials. We use the admittance spectroscopy method for analyzing free carrier concentration and boron-impurity activation energy in semiconductor diamond. The special aspect that should be taken into account while studying wide bandgap materials is incomplete ionization of impurity. In this work we adjust the experimental conditions, basing on the previous experience, in particular reduce signal/noise ratio and reckon with heat capacity of the samples and substrate. As a result we obtained high quality conductance spectra and activation energy of boron impurity in low-doped diamond.

2011 ◽  
Vol 324 ◽  
pp. 46-51 ◽  
Author(s):  
Dominique Tournier ◽  
Pierre Brosselard ◽  
Christophe Raynaud ◽  
Mihai Lazar ◽  
Herve Morel ◽  
...  

Progress in semiconductor technologies have been so consequent these last years that theoretical limits of silicon, speci cally in the eld of high power, high voltage and high temperature have been achieved. At the same time, research on other semiconductors, and es- pecially wide bandgap semiconductors have allowed to fabricate various power devices reliable and performant enough to design high eciency level converters in order to match applications requirements. Among these wide bandgap materials, SiC is the most advanced from a techno- logical point of view: Schottky diodes are already commercially available since 2001, JFET and MOSFET will be versy soon. SiC-based switches Inverter eciency bene ts have been quite established. Considering GaN alternative technology, its driving force was mostly blue led for optical drive or lighting. Although the GaN developments mainly focused for the last decade on optoelectronics and radio frequency, their properties were recently explored to design devices suitable for high power and high eciency applications. As inferred from various studies, due to their superior material properties, diamond and GaN should be even better than SiC, silicon (or SOI) being already closed to its theoretical limits. Even if the diamond maturity is still far away from GaN and SiC, laboratory results are encouraging speci cally for very high voltage devices. Apart from packaging considerations, SiC, GaN and Diamond o ers a great margin of progress. The new power devices o er high voltage and low on-resistance that enable important reduction in energy consumption in nal applications. Applications for wide bandgap materials are the direction of high voltage but also high temperature. As for silicon technology, WBG-ICs are under development to take full bene ts of power and drive integration for high temperature applications.


2015 ◽  
Vol 2015 ◽  
pp. 1-2
Author(s):  
Meiyong Liao ◽  
Thomas Stergiopoulos ◽  
Jose Alvarez ◽  
Surojit Chattopadhyay ◽  
Guihua Zhang

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