Temperature Measurement in Laminar Free Convection Using Electro-Optic Holography

G. Schirripa Spagnolo; D. Ambrosini; A. Ponticiello; D. Paoletti

doi:10.1051/jp3:1997230

Temperature Measurement in Laminar Free Convection Using Electro-Optic Holography

Journal de Physique III ◽

10.1051/jp3:1997230 ◽

1997 ◽

Vol 7 (9) ◽

pp. 1893-1898 ◽

Cited By ~ 6

Author(s):

G. Schirripa Spagnolo ◽

D. Ambrosini ◽

A. Ponticiello ◽

D. Paoletti

Keyword(s):

Free Convection ◽

Temperature Measurement ◽

Electro Optic

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Electric field and temperature measurement using ultra wide bandwidth pigtailed electro-optic probes

Applied Optics ◽

10.1364/ao.47.002470 ◽

2008 ◽

Vol 47 (13) ◽

pp. 2470 ◽

Cited By ~ 26

Author(s):

Maxime Bernier ◽

Gwenaël Gaborit ◽

Lionel Duvillaret ◽

Alain Paupert ◽

Jean-Louis Lasserre

Keyword(s):

Electric Field ◽

Temperature Measurement ◽

Wide Bandwidth ◽

Electro Optic

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Epitaxial ferroelectric thin films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100170591 ◽

1994 ◽

Vol 52 ◽

pp. 572-573

Author(s):

S. G. Ghonge ◽

E. Goo ◽

R. Ramesh ◽

R. Haakenaasen ◽

D. K. Fork

Keyword(s):

Single Crystal ◽

Work Function ◽

Nonvolatile Memory ◽

Ferroelectric Properties ◽

Electrical Contact ◽

Memory Devices ◽

Ferroelectric Films ◽

Si Substrates ◽

Electro Optic ◽

Wide Range

Microstructure of epitaxial ferroelectric/conductive oxide heterostructures on LaAIO3(LAO) and Si substrates have been studied by conventional and high resolution transmission electron microscopy. The epitaxial films have a wide range of potential applications in areas such as non-volatile memory devices, electro-optic devices and pyroelectric detectors. For applications such as electro-optic devices the films must be single crystal and for applications such as nonvolatile memory devices and pyroelectric devices single crystal films will enhance the performance of the devices. The ferroelectric films studied are Pb(Zr0.2Ti0.8)O3(PLZT), PbTiO3(PT), BiTiO3(BT) and Pb0.9La0.1(Zr0.2Ti0.8)0.975O3(PLZT).Electrical contact to ferroelectric films is commonly made with metals such as Pt. Metals generally have a large difference in work function compared to the work function of the ferroelectric oxides. This results in a Schottky barrier at the interface and the interfacial space charge is believed to responsible for domain pinning and degradation in the ferroelectric properties resulting in phenomenon such as fatigue.

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