ASYMMETRIC SHUBNIKOV-DE HAAS OSCILLATIONS AND HALL PLATEAUS OF HETEROJUNCTIONS IN THE QUANTUM HALL REGIME

We study properties of the simplest type of electron interferometer, the Mach-Zehnder Interferometer (MZI) in the Integer Quantum Hall (IQH) regime. In this work, in order to analyse the novel experimental results reported by I. Neder et al. [Phys. Rev. Lett.96, 016804 (2006)] which makes questionable the validity of Landauer-Buttiker formalism in the IQH regime, we have derived expressions for tunneling currents through the electronic MZI system whithin the model of quantum dissipation induced by an environment. In this model the MZI system is coupled to a dissipative environment, where the dissipation is introduced by coupling the MZI system to a frequency-independent Ohmic impedance Z(ω) = R.

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Measuring interactions between tunnel-coupled quantum dots in the quantum Hall regime

Journal of Applied Physics ◽

10.1063/1.371326 ◽

1999 ◽

Vol 86 (7) ◽

pp. 4043-4045 ◽

Cited By ~ 6

Author(s):

C. Livermore ◽

D. S. Duncan ◽

R. M. Westervelt ◽

K. D. Maranowski ◽

A. C. Gossard

Keyword(s):

Quantum Dots ◽

Quantum Hall ◽

Coupled Quantum Dots ◽

Quantum Hall Regime ◽

Hall Regime

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Quasiparticle Tunneling through a Barrier in the Fractional Quantum Hall Regime

Physical Review Letters ◽

10.1103/physrevlett.95.136803 ◽

2005 ◽

Vol 95 (13) ◽

Cited By ~ 4

Author(s):

Elad Shopen ◽

Yuval Gefen ◽

Yigal Meir

Keyword(s):

Quantum Hall ◽

Fractional Quantum ◽

Fractional Quantum Hall ◽

Quasiparticle Tunneling ◽

Quantum Hall Regime ◽

Hall Regime

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Conditions for experimental observation of the critical behavior of the longitudinal and Hall resistance in the quantum Hall regime in gallium and indium arsenide-based heterostructures

Low Temperature Physics ◽

10.1063/1.4983184 ◽

2017 ◽

Vol 43 (4) ◽

pp. 478-484

Author(s):

A. S. Klepikova ◽

Yu. G. Arapov ◽

S. V. Gudina ◽

V. N. Neverov ◽

G. I. Harus ◽

...

Keyword(s):

Experimental Observation ◽

Indium Arsenide ◽

Critical Behavior ◽

Quantum Hall ◽

Hall Resistance ◽

Quantum Hall Regime ◽

Hall Regime

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INFLUENCE OF NEARBY QD LAYER ON 2DES IN QUANTUM HALL REGIME

International Journal of Modern Physics B ◽

10.1142/s0217979207042987 ◽

2007 ◽

Vol 21 (08n09) ◽

pp. 1445-1449

Author(s):

K. TAKEHANA ◽

Y. IMANAKA ◽

T. TAKAMASU ◽

M. HENINI

Keyword(s):

Magnetic Field ◽

Transport Properties ◽

Gate Voltage ◽

Quantum Hall ◽

Electron System ◽

Hall Resistance ◽

Field Range ◽

Voltage Range ◽

Quantum Hall Regime ◽

Hall Regime

We have investigated transport properties in high magnetic field of a gated two-dimensional electron system (2DES) separated by a thin barrier from a layer of self-assembled InAs quantum dots (QDs) in the quantum Hall regime. The quality of 2DES was found to be high enough to observe both integer and fractional quantum Hall effect (QHE), despite the proximity of the QD layer to the 2DES. However, significant suppression of the magnetoresistance (ρ xx ) and Hall resistance (ρ xy ) were observed in higher magnetic field range of filling factor ν < 1 when a positive voltage was applied to the front gate. The gate voltage dependence of ρ xx and ρ xy shows a well-defined hysteresis loop at the narrow gate voltage range between -0.2 and +0.2 V at ν < 1, while no anomaly was observed at ν > 1. We deduce that charging and discharging of QDs occurs when the gate voltage is varied around Vg ~ 0 V, which indicates that the electron charge states of the QDs affect the transport properties of the nearby 2DES only at ν < 1. We infer that the spin-flip process induces a non-equilibrium state in the 2DEG, which causes the suppression of ρ xx and ρ xy .

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