ELECTRICAL ACTIVITY OF GRAIN BOUNDARIES IN SILICON GROWN WITH AN ALUMINIUM CONTENT GRADIENT

1990 ◽  
Vol 51 (C1) ◽  
pp. C1-439-C1-444 ◽  
Author(s):  
T. BENABBAS ◽  
C. CABANEL ◽  
J. Y. LAVAL ◽  
J. L. PASTOL ◽  
NGUYEN DINH HUYNH
Keyword(s):  
Electrical Activity ◽  
Grain Boundaries ◽  
Aluminium Content

scholarly journals Atomic Structure and Electrical Activity of Grain Boundaries and Ruddlesden-Popper Faults in Cesium Lead Bromide Perovskite

2018 ◽  
Vol 31 (4) ◽  
pp. 1805047 ◽  
Author(s):  
Arashdeep Singh Thind ◽  
Guangfu Luo ◽  
Jordan A. Hachtel ◽  
Maria V. Morrell ◽  
Sung Beom Cho ◽  
...  
Keyword(s):  
Electrical Activity ◽  
Grain Boundaries ◽  
Atomic Structure ◽  
Lead Bromide

Electrical Activity of Grain Boundaries in Shaped Grown Silicon

1990 ◽  
Vol 119 (2) ◽  
pp. 523-534 ◽  
Author(s):  
A. Fedotov ◽  
B. Evtodyi ◽  
L. Fionova ◽  
Yu. Ilyashuk ◽  
E. Katz ◽  
...  
Keyword(s):  
Electrical Activity ◽  
Grain Boundaries

Impact of Grain Boundary Character on Electrical Property in Polycrystalline Silicon

1999 ◽  
Vol 586 ◽  
Author(s):  
Shu Hamada ◽  
Koichi Kawahara ◽  
Sadahiro Tsurekawa ◽  
Tadao Watanabe ◽  
Takashi Sekiguchi
Keyword(s):  
Electrical Activity ◽  
Temperature Dependence ◽  
Grain Boundaries ◽  
Band Gap ◽  
Misorientation Angle ◽  
Polycrystalline Silicon ◽  
Dominant Role ◽  
Localized States ◽  
Localized State ◽  
The Difference

ABSTRACTGrain boundaries in polycrystalline silicon are most likely to generate localized states in band gap. The localized states play a dominant role in determining the performance of solar cells by acting as traps or recombination center of carriers. In the present investigation, the scanning electron microscope - electron channeling pattern(SEM/ECP) method and SEM - electron back scattered diffraction pattern(SEM/EBSD) technique were applied to characterize the grain boundaries in p-type polycrystalline silicon with 99.999%(5N) in purity. Thereafter, temperature dependence of electrical activity of individual grain boundaries was measured by an electron beam induced current(EBIC) technique.It has been found that temperature dependence of EBIC contrast at grain boundaries can change, depending on the misorientation angle the orientation of the boundary plane. The results can be explained by the difference in the position of the localized state within the band gap on the basis of the Shockley-Read-Hall statistics. The {111} ∑3 symmetrical tilt boundary has shallow states, while high ∑ boundaries have deep states. Low angle boundaries reveal high electrical activities. The EBIC contrast at low angle boundaries was found to increase with increasing misorientation angle up to 2° followed by an almost constant value. High electrical activity at low angle boundaries is probably attributed to a stress field of primary dislocations forming low angle boundaries.

Electrical Activity of Tilt and Twist Grain Boundaries in Silicon

1999 ◽  
Vol 67-68 ◽  
pp. 15-20 ◽  
Author(s):  
A.K. Fedotov ◽  
A.V. Mazanik ◽  
E.A. Katz ◽  
Yu. Ilyashuk ◽  
A. Drozdovski ◽  
...  
Keyword(s):  
Electrical Activity ◽  
Grain Boundaries

ELECTRICAL ACTIVITY OF GRAIN BOUNDARIES IN SILICON BY THE S.T.E.B.I.C. METHOD

1989 ◽  
Vol 50 (C6) ◽  
pp. C6-154-C6-154
Author(s):  
C. CABANEL ◽  
J.-Y. LAVAL
Keyword(s):  
Electrical Activity ◽  
Grain Boundaries

The Role of Non-Stoichiometry in the Electrical Activity of Grain Boundaries in SrTiO3

2000 ◽  
Vol 6 (S2) ◽  
pp. 184-185
Author(s):  
Miyoung Kim ◽  
G. Duscher ◽  
Nigel D. Browning ◽  
Stephen J. Pennycook ◽  
Karl Sohlberg ◽  
...  
Keyword(s):  
Electrical Activity ◽  
Grain Boundaries
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