Springer Proceedings in Physics - Polycrystalline Semiconductors
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Published By Springer Berlin Heidelberg

9783642934155, 9783642934131

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Effect of the Grain Boundaries in Small Grain Polysilicon Thin Film Transistors

Springer Proceedings in Physics - Polycrystalline Semiconductors ◽

10.1007/978-3-642-93413-1_49 ◽

1989 ◽

pp. 366-369

Author(s):

A. Sakri ◽

A. Le Glaunec ◽

Y. Colin ◽

O. Bonnaud

Keyword(s):

Thin Film ◽

Grain Boundaries ◽

Thin Film Transistors

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Microstructure and Interfaces of Polysilicon in Integrated Circuits

Springer Proceedings in Physics - Polycrystalline Semiconductors ◽

10.1007/978-3-642-93413-1_48 ◽

1989 ◽

pp. 354-365 ◽

Cited By ~ 5

Author(s):

H. Cerva ◽

H. Oppolzer

Keyword(s):

Integrated Circuits

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Computer Modelling of Grain Boundaries by Use of Interatomic Potentials

Springer Proceedings in Physics - Polycrystalline Semiconductors ◽

10.1007/978-3-642-93413-1_4 ◽

1989 ◽

pp. 25-33 ◽

Cited By ~ 8

Author(s):

H. Teichler

Keyword(s):

Grain Boundaries ◽

Computer Modelling ◽

Interatomic Potentials

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Metal and Polycrystalline Silicon Reactions

Springer Proceedings in Physics - Polycrystalline Semiconductors ◽

10.1007/978-3-642-93413-1_31 ◽

1989 ◽

pp. 225-233 ◽

Cited By ~ 1

Author(s):

K. N. Tu ◽

T. C. Chou

Keyword(s):

Polycrystalline Silicon

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Characterization of MBE-Grown Polysilicon

Springer Proceedings in Physics - Polycrystalline Semiconductors ◽

10.1007/978-3-642-93413-1_27 ◽

1989 ◽

pp. 192-197 ◽

Cited By ~ 1

Author(s):

M. Kuisl ◽

U. König ◽

F. Schäffler ◽

R. Lossos

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Grain Boundary Structure Determination by HREM: A Comparison with Computer Relaxed Configurations for Pure Tilt in Germanium

Springer Proceedings in Physics - Polycrystalline Semiconductors ◽

10.1007/978-3-642-93413-1_2 ◽

1989 ◽

pp. 8-18 ◽

Cited By ~ 15

Author(s):

A. Bourret ◽

J. L. Rouvière

Keyword(s):

Grain Boundary ◽

Structure Determination ◽

Boundary Structure ◽

Grain Boundary Structure

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SEM-EBIC Investigations of the Electrical Activity of Grain Boundaries in Germanium

Springer Proceedings in Physics - Polycrystalline Semiconductors ◽

10.1007/978-3-642-93413-1_12 ◽

1989 ◽

pp. 89-94 ◽

Cited By ~ 3

Author(s):

N. Tabet ◽

C. Monty ◽

Y. Marfaing

Keyword(s):

Electrical Activity ◽

Grain Boundaries

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Intergranular Total Energy Maps and the Structure of a Grain Boundary

Springer Proceedings in Physics - Polycrystalline Semiconductors ◽

10.1007/978-3-642-93413-1_1 ◽

1989 ◽

pp. 2-7 ◽

Cited By ~ 1

Author(s):

E. Tarnow ◽

P. Bristowe ◽

J. D. Joannopoulos ◽

M. Payne

Keyword(s):

Grain Boundary ◽

Total Energy ◽

Energy Maps

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The Influence of Structure and Impurity Precipitation on the Electrical Properties of the Grain Boundaries in Silicon: Copper Precipitation in the Σ = 25 Boundary

Springer Proceedings in Physics - Polycrystalline Semiconductors ◽

10.1007/978-3-642-93413-1_9 ◽

1989 ◽

pp. 64-76 ◽

Cited By ~ 21

Author(s):

M. Aucouturier ◽

A. Broniatowski ◽

A. Chari ◽

J. L. Maurice

Keyword(s):

Electrical Properties ◽

Grain Boundaries ◽

Copper Precipitation

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High Resolution Electron Microscopy of the Structure and Chemistry of Grain Boundaries and Other Interfaces in Semiconductors

Springer Proceedings in Physics - Polycrystalline Semiconductors ◽

10.1007/978-3-642-93413-1_6 ◽

1989 ◽

pp. 42-51 ◽

Cited By ~ 6

Author(s):

Y. Ishida ◽

H. Ichinose

Keyword(s):

Electron Microscopy ◽

High Resolution ◽

Grain Boundaries ◽

High Resolution Electron Microscopy ◽

Resolution Electron

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Springer Proceedings in Physics - Polycrystalline SemiconductorsLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By Springer Berlin Heidelberg

Effect of the Grain Boundaries in Small Grain Polysilicon Thin Film Transistors

Microstructure and Interfaces of Polysilicon in Integrated Circuits

Computer Modelling of Grain Boundaries by Use of Interatomic Potentials

Metal and Polycrystalline Silicon Reactions

Characterization of MBE-Grown Polysilicon

Grain Boundary Structure Determination by HREM: A Comparison with Computer Relaxed Configurations for Pure Tilt in Germanium

SEM-EBIC Investigations of the Electrical Activity of Grain Boundaries in Germanium

Intergranular Total Energy Maps and the Structure of a Grain Boundary

The Influence of Structure and Impurity Precipitation on the Electrical Properties of the Grain Boundaries in Silicon: Copper Precipitation in the Σ = 25 Boundary

High Resolution Electron Microscopy of the Structure and Chemistry of Grain Boundaries and Other Interfaces in Semiconductors

Springer Proceedings in Physics - Polycrystalline Semiconductors
Latest Publications