This paper reviews the recent developments on building nanoelectronics for our future information processing paradigm using multiferroic composites. With appropriate choice of materials, when a tiny voltage of few tens of millivolts is applied across a multiferroic composite, i.e., a piezoelectric layer stain-coupled with a magnetostrictive layer, the piezoelectric layer gets strained and the generated stress in the magnetostrictive layer switches the magnetization direction between its two stable states. We particularly review the switching dynamics of magnetization and calculation of associated metrics like switching delay and energy dissipation. Such voltage-induced magnetization switching mechanism dissipates a minuscule amount of energy of only ~ 1 attojoule in sub-nanosecond switching delay at room-temperature. The performance metrics for such nonvolatile straintronic devices make them very attractive for building not only memory devices but also building logic, so that they can be deemed suitable for computational purposes. Hence, multiferroic straintronics has profound promise of contributing to beyond Moore's law technology, i.e., of being possible replacement of conventional charge-based electronics, which is reaching its performance limit specifically due to excessive energy dissipation.
CURRENT PRACTICE AND RECENT DEVELOPMENTS IN THE MINERAL PROCESSING OPERATIONS OF AM & S MINING PTY LTD.
