Electron and x‐ray diffraction study of ZnTe‐ZnS strained‐layer superlattices grown by molecular beam epitaxy

1989 ◽  
Vol 54 (2) ◽  
pp. 117-119 ◽  
Author(s):  
Takeshi Karasawa ◽  
Kazuhiro Ohkawa ◽  
Tsuneo Mitsuyu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Diffraction Study ◽  
Molecular Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Strained Layer ◽  
Strained Layer Superlattices

X-Ray Diffraction Determination of Critical Thickness of InAs and InP on GaAs Grown by Atomic Layer Molecular Beam Epitaxy

1992 ◽  
Vol 263 ◽  
Author(s):  
A. Mazuelas ◽  
L. Gonzalez ◽  
L. Tapfer ◽  
F. Briones
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Critical Thickness ◽  
Atomic Layer ◽  
Dynamical Theory ◽  
X Ray Diffraction ◽  
X Ray ◽  
Strained Layer ◽  
Diffraction Determination ◽  
Cap Layer

ABSTRACTTwo series of samples consisting in a strained layer of InAs (InP) of different thickness, InAs N monolayers (ML) with N=1,2,3, and 4, and, InP M ML with M=2,3,4,5,6 and 7, covered by a GaAs cap layer of 200 nm were grown by Atomic Layer Molecular Beam Epitaxy (ALMBE).The samples have been characterized by X-ray diffraction in order to measure the critical thickness of InAs and InP on GaAs.Computer simulation using dynamical theory of X-ray diffraction is used to fit the experimental patterns. In this way we determine the composition, thickness, and strain both in the strained layer of InAs or InP and in the cap layer of GaAs.A disagreement between simulated and experimental curves is reached at a thickness where the beginning of relaxation takes place (i.e. critical thickness). We have found that the critical thickness of InAs on GaAs(001) is 2.3 ML (0.75 nm) and the critical thickness of InP on GaAs(001) is 5.6–5.7 ML (1.71-1.74 nm), both grown by ALMBE.

High-resolution x-ray diffraction study of InAs-GaAs superlattices grown by molecular-beam epitaxy at low temperature

1998 ◽  
Vol 32 (1) ◽  
pp. 19-25 ◽  
Author(s):  
N. N. Faleev ◽  
V. V. Chaldyshev ◽  
A. E. Kunitsyn ◽  
V. V. Tret’yakov ◽  
V. V. Preobrazhenskii ◽  
...  
Keyword(s):  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Diffraction Study ◽  
Molecular Beam ◽  
X Ray Diffraction ◽  
X Ray
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