Defect reduction in GexSi1−xepitaxy by rapid thermal processing chemical vapor deposition using a low‐temperatureinsitupreclean and a Si buffer layer

1991 ◽  
Vol 58 (21) ◽  
pp. 2348-2350 ◽  
Author(s):  
K. H. Jung ◽  
T. Y. Hsieh ◽  
D. L. Kwong
Keyword(s):  
Chemical Vapor Deposition ◽  
Buffer Layer ◽  
Vapor Deposition ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Chemical Vapor ◽  
Defect Reduction

Relaxed GexSi1−xfilms grown by rapid thermal processing chemical vapor deposition

1990 ◽  
Vol 56 (18) ◽  
pp. 1775-1777 ◽  
Author(s):  
K. H. Jung ◽  
Y. M. Kim ◽  
D. L. Kwong
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Chemical Vapor

Multizone Rapid Thermal Processing to Overcome Challenges in Carbon Nanotube Manufacturing by Chemical Vapor Deposition

2019 ◽  
Author(s):  
Jaegeun Lee ◽  
Moataz Abdulhafez ◽  
Mostafa Bedewy
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Growth Dynamics ◽  
Chemical Vapor ◽  
Aligned Carbon Nanotubes ◽  
Vertically Aligned ◽  
Scalable Production

Abstract For the scalable production of commercial products based on vertically aligned carbon nanotubes (VACNTs), referred to as CNT forests, key manufacturing challenges must be overcome. In this work, we describe some of the main challenges currently facing CNT forest manufacturing, along with how we address these challenges with our custom-built rapid thermal processing chemical vapor deposition (CVD) reactor. First, the complexity of multistep processes and reaction pathways involved in CNT growth by CVD limits the control on CNT population growth dynamics. Importantly, gas-phase decomposition of hydrocarbons, formation of catalyst particles, and catalytic growth of CNTs are typically coupled. Here, we demonstrated a decoupled recipe with independent control of each step. Second, significant run-to-run variations plague CNT growth by CVD. To improve growth consistency, we designed various measures to remove oxygen-containing molecules from the reactor, including air baking between runs, dynamic pumping down cycles, and low-pressure baking before growth. Third, real-time measurements during growth are needed for process monitoring. We implement in situ height kinetics via videography. The combination of approaches presented here has the potential to transform lab-scale CNT synthesis to robust manufacturing processes.

Boron‐enhanced low‐temperature Si epitaxy by rapid thermal processing chemical vapor deposition

1992 ◽  
Vol 61 (4) ◽  
pp. 474-476 ◽  
Author(s):  
T. Y. Hsieh ◽  
K. H. Jung ◽  
D. L. Kwong ◽  
Y. M. Kim ◽  
R. Brennan
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Chemical Vapor ◽  
Low Temperature Si Epitaxy ◽  
Si Epitaxy

Silicon Homoepitaxy by Rapid Thermal Processing Chemical Vapor Deposition (RTPCVD)—A Review

1991 ◽  
Vol 138 (4) ◽  
pp. 1188-1207 ◽  
Author(s):  
T. Y. Hsieh ◽  
K. H. Jung ◽  
D. L. Kwong ◽  
S. K. Lee
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Chemical Vapor

ChemInform Abstract: Silicon Homoepitaxy by Rapid Thermal Processing Chemical Vapor Deposition (RTPCVD) - A Review

ChemInform ◽  
2010 ◽  
Vol 22 (24) ◽  
pp. no-no
Author(s):  
T. Y. HSIEH ◽  
K. H. JUNG ◽  
D. L. KWONG ◽  
S. K. LEE
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Chemical Vapor

Limited Reaction Processing: Silicon and III–V Materials

1987 ◽  
Vol 92 ◽  
Author(s):  
James F. Gibbons ◽  
S. Reynolds ◽  
C. Gronet ◽  
D. Vook ◽  
C. King ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Chemical Vapor ◽  
Group Iv ◽  
Interface Quality ◽  
A New Technique ◽  
Transistor Fabrication ◽  
Reaction Processing

ABSTRACTLimited Reaction Processing (LRP) is a new technique which combines Rapid Thermal Processing (RTP) and Chemical Vapor Deposition (CVD). The added temperature control provided in rapid thermal processing enables the use of substrate temperature as a reaction switch. In addition, rapid thermal technology has been shown to provide other advantages for chemical vapor deposition of Si and III–V materials. Results are presented for group IV materials including epitaxial Si, SiGe alloys, SiO2 , and polysilicon. MOSFETs have been demonstrated and sensitive tests of interface quality are presented, paving the way for future bipolar transistor fabrication. III–V materials such as GaAs, AlGaAs, InGaAs have been grown. GaAs electron mobilities are the best reported for material grown using trimethylarsenic. As-ambient rapid thermal anneals of GaAs have also been performed.

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