Modeling and characterization of high-efficiency silicon solar cells fabricated by rapid thermal processing, screen printing, and plasma-enhanced chemical vapor deposition

1997 ◽  
Vol 44 (9) ◽  
pp. 1417-1424 ◽  
Author(s):  
P. Doshi ◽  
J. Mejia ◽  
K. Tate ◽  
A. Rohatgi
1991 ◽  
Vol 220 ◽  
Author(s):  
K. H. Jung ◽  
R. A. Mayer ◽  
T. Y. Hsieh ◽  
J. C. Campbell ◽  
D. L. Kwong

ABSTRACTWe report the growth and characterization of GexSi1−x films for optical waveguiding. GexSi1−x/Si waveguides were grown by rapid thermal processing chemical vapor deposition. An average attenuation of 3.3 dB/cm was achieved for a 1 μm thick Ge0.04Si0.96 layer patterned into rib waveguides 2000 Å deep with widths of 5 μm. Directional couplers were also fabricated. Average coupling efficiencies of 85% were achieved for 1.5 μm interwaveguide separation.


1996 ◽  
Vol 426 ◽  
Author(s):  
Seung Jae Baik ◽  
Jinsoo Song ◽  
Koeng Su Lim

AbstractTo obtain high quality ZnO thin films for use as transparent electrodes of amorphous silicon solar cells, hydrogen treatment of the films using photo-chemical vapor deposition was performed for the first time. The as-deposited ZnO thin film was irradiated by UV light during the flow of hydrogen molecules in the presence of photo-sensitizers of mercury. As the treatment time increased, resistivity decreased from 1 × 10−2Ωcm to 2 × 10−3Ωcm. Moreover, haze ratio increased from 20% to 48%. Hydrogen radicals were thought to be playing various roles on the neighborhood of the surface region and the grain boundary region. This new trial gave us new understanding into the relation between hydrogen and ZnO. Moreover, these results could be applied to the process of amorphous silicon solar cells and a possible increase of efficiency is expected.


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