Strain relaxation and ordering in SiGe layers grown on (100), (111), and (110) Si surfaces by molecular‐beam epitaxy
1995 ◽
Vol 182-184
◽
pp. 255-258
1997 ◽
Vol 14
(3)
◽
pp. 209-212
◽
Keyword(s):
Keyword(s):
Keyword(s):