Strain relaxation of the In0.53Ga0.47As epi-layer grown on a Si substrate using molecular beam epitaxy

CrystEngComm ◽  
2014 ◽  
Vol 16 (46) ◽  
pp. 10721-10727 ◽  
Author(s):  
Fangliang Gao ◽  
Lei Wen ◽  
Yunfang Guan ◽  
Jingling Li ◽  
Xiaona Zhang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Si Substrate ◽  
Structural Perfection ◽  
High Degree

The as-grown In0.53Ga0.47As epi-layer grown on Si substrate by using low-temperature In0.4Ga0.6As buffer layer with in-situ annealing is of a high degree of structural perfection.

STRAIN RELAXATION IN SiGe VIRTUAL SUBSTRATE CHARACTERIZED BY HIGH RESOLUTION X-RAY DIFFRACTION

2010 ◽  
Vol 24 (22) ◽  
pp. 4225-4231
Author(s):  
W. S. TAN ◽  
H. L. CAI ◽  
X. S. WU ◽  
K. M. DENG ◽  
H. H. CHENG
Keyword(s):  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sb Doping

In this paper, with solid source molecular beam epitaxy technique, Si 1-x Ge x( SiGe ) virtual substrates were deposited on low-temperature-grown Si (LT- Si ) buffer layer, which was doped with Sb . The strain in SiGe virtual substrate was characterized by high resolution X-ray diffraction. Results indicated that Sb -doping in LT- Si can effectively modulate the degree of strain relaxation in SiGe virtual substrate. The segregated Sb on the surface of LT- Si layer acts as surfactant and results in abrupt strain relaxation.

A Study on the Growth of Cubic GaN Films Using an AlGaAs Buffer Layer Grown on GaAs (100) by Plasma-Assisted Molecular Beam Epitaxy

2000 ◽  
Vol 639 ◽  
Author(s):  
Ryuhei Kimura ◽  
Kiyoshi Takahashi ◽  
H. T. Grahn
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
High Energy ◽  
Rf Plasma ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cubic Gan

ABSTRACTAn investigation of the growth mechanism for RF-plasma assisted molecular beam epitaxy of cubic GaN films using a nitrided AlGaAs buffer layer was carried out by in-situ reflection high energy electron diffraction (RHEED) and high resolution X-ray diffraction (HRXRD). It was found that hexagonal GaN nuclei grow on (1, 1, 1) facets during nitridation of the AlGaAs buffer layer, but a highly pure, cubic-phase GaN epilayer was grown on the nitrided AlGaAs buffer layer.

Si‐substrate preparation for GaAs/Si molecular‐beam epitaxy at low temperature under a Si flux

1988 ◽  
Vol 64 (1) ◽  
pp. 246-248 ◽  
Author(s):  
J. Castagne ◽  
E. Bedel ◽  
C. Fontaine ◽  
A. Munoz‐Yague
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Si Substrate ◽  
Substrate Preparation

Growth of Luminescent GaAsP on Si Substrate by Metalorganic Molecular Beam Epitaxy Using GaP Buffer Layer

1998 ◽  
Vol 37 (Part 1, No. 4A) ◽  
pp. 1709-1714 ◽  
Author(s):  
Masahiro Yoshimoto ◽  
Yasuhiro Watanabe ◽  
Hiroyuki Matsunami
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Si Substrate ◽  
Metalorganic Molecular Beam Epitaxy

Molecular beam epitaxy of high-quality CuI thin films on a low temperature grown buffer layer

2020 ◽  
Vol 116 (19) ◽  
pp. 192105 ◽  
Author(s):  
S. Inagaki ◽  
M. Nakamura ◽  
N. Aizawa ◽  
L. C. Peng ◽  
X. Z. Yu ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Buffer Layer ◽  
Molecular Beam ◽  
High Quality

P-Type Doping with Arsenic in MBE-HgCdTe Using Planar Doping Approach

1996 ◽  
Vol 450 ◽  
Author(s):  
F. Aqariden ◽  
P. S. Wijew Arnasuriya ◽  
S. Rujirawat ◽  
S. Sivananthan
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Optoelectronic Devices ◽  
Mbe Growth ◽  
In Situ Fabrication ◽  
P Type ◽  
Arsenic Incorporation ◽  
Planar Doping

ABSTRACTThe results of arsenic incorporation in HgCdTe (MCT) layers grown by molecular beam epitaxy (MBE) are reported. The incorporation into MBE-MCT was carried out by a technique called planar doping. Arsenic was successfully incorporated during the MBE growth or after a low temperature anneal as acceptors. These results are very promising for in-situ fabrication of advanced optoelectronic devices using HgCdTe material.

Strain relaxation of GeSi/Si(001) heterostructures grown by low-temperature molecular-beam epitaxy

2004 ◽  
Vol 96 (12) ◽  
pp. 7665-7674 ◽  
Author(s):  
Yu. B. Bolkhovityanov ◽  
A. S. Deryabin ◽  
A. K. Gutakovskii ◽  
M. A. Revenko ◽  
L. V. Sokolov
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Strain Relaxation
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