Strain relaxation in single crystal SrTiO3 grown on Si (001) by molecular beam epitaxy

2012 ◽  
Vol 111 (6) ◽  
pp. 064112 ◽  
Author(s):  
Miri Choi ◽  
Agham Posadas ◽  
Rytis Dargis ◽  
Chih-Kang Shih ◽  
Alexander A. Demkov ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Molecular Beam ◽  
Strain Relaxation

Strain Relaxation in (CdMg)Te Layers Grown by Molecular Beam Epitaxy

1995 ◽  
Vol 182-184 ◽  
pp. 255-258
Author(s):  
H. Heinke ◽  
Franz Dieter Fischer ◽  
A. Waag ◽  
T. Litz ◽  
M. Korn ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Strain Relaxation

Novel InGaPBi single crystal grown by molecular beam epitaxy

2015 ◽  
Vol 8 (4) ◽  
pp. 041201 ◽  
Author(s):  
Li Yue ◽  
Peng Wang ◽  
Kai Wang ◽  
Xiaoyan Wu ◽  
Wenwu Pan ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Molecular Beam

Growth mode and strain relaxation of InAs on InP (111)A grown by molecular beam epitaxy

1999 ◽  
Vol 74 (10) ◽  
pp. 1388-1390 ◽  
Author(s):  
Hanxuan Li ◽  
Theda Daniels-Race ◽  
Zhanguo Wang
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Growth Mode

Summary Abstract: Growth of single crystal and polycrystalline insulating fluoride films on semiconductors by molecular beam epitaxy

1982 ◽  
Vol 20 (3) ◽  
pp. 731-732 ◽  
Author(s):  
P. W. Sullivan ◽  
T. I. Cox ◽  
R. F. C. Farrow ◽  
G. R. Jones ◽  
D. B. Gasson ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Molecular Beam

Strain relaxation in GaN/AlxGa1-xN superlattices grown by plasma-assisted molecular-beam epitaxy

2011 ◽  
Vol 110 (3) ◽  
pp. 033501 ◽  
Author(s):  
Y. Kotsar ◽  
B. Doisneau ◽  
E. Bellet-Amalric ◽  
A. Das ◽  
E. Sarigiannidou ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Strain Relaxation

Damage Removal and Strain Relaxation in As + -Implanted Si 0.57 Ge 0.43 Epilayers Grown by Gas Source Molecular Beam Epitaxy

1997 ◽  
Vol 14 (3) ◽  
pp. 209-212 ◽  
Author(s):  
Zou Lü-fan (Zou Lyu-fan) ◽  
Wang Zhan-guo ◽  
Sun Dian-zhao ◽  
Fan Ti-wen ◽  
Liu Xue-feng ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Gas Source

Single-crystal zincblende GaN grown on GaP (100) substrate by molecular beam epitaxy

2003 ◽  
Vol 251 (1-4) ◽  
pp. 465-470 ◽  
Author(s):  
Min-Ho Kim ◽  
F.S. Juang ◽  
Y.G. Hong ◽  
C.W. Tu ◽  
Seong-Ju Park
Keyword(s):  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Molecular Beam

Strain relaxation of GeSi/Si(001) heterostructures grown by low-temperature molecular-beam epitaxy

2004 ◽  
Vol 96 (12) ◽  
pp. 7665-7674 ◽  
Author(s):  
Yu. B. Bolkhovityanov ◽  
A. S. Deryabin ◽  
A. K. Gutakovskii ◽  
M. A. Revenko ◽  
L. V. Sokolov
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Strain Relaxation

Homoepitaxial growth of ZnS single crystal thin films by molecular beam epitaxy

1990 ◽  
Vol 99 (1-4) ◽  
pp. 451-454 ◽  
Author(s):  
Yoshitaka Tomomura ◽  
Masahiko Kitagawa ◽  
Akira Suzuki ◽  
Shigeo Nakajima
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Molecular Beam ◽  
Homoepitaxial Growth
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