Evidence for the neutral charge state model of the DX center from low temperature Hall mobility measurements

1992 ◽  
Vol 60 (20) ◽  
pp. 2517-2519 ◽  
Author(s):  
G. A. Leith ◽  
S. Zukotynski ◽  
A. J. SpringThorpe
Keyword(s):  
Low Temperature ◽  
Charge State ◽  
Hall Mobility ◽  
State Model ◽  
Dx Center ◽  
Neutral Charge State

DX Centers in AlGaAs and Pressurised GaAs

1993 ◽  
Vol 300 ◽  
Author(s):  
S. Anand ◽  
S. Subramanian ◽  
B. M. Arora ◽  
Y. C. Lu ◽  
E. Bauser
Keyword(s):  
Low Temperature ◽  
Effective Mass ◽  
Charge State ◽  
Hall Mobility ◽  
Thermal Emission ◽  
Dx Centers ◽  
Emission Properties ◽  
Dx Center ◽  
Neutron Transmutation

ABSTRACTIn this paper, we present results of our investigations on some aspects of the DX centers. It is shown from the low temperature Hall mobility measurements that the charge state of the DX center is neutral supporting the positive U model for the DX center. Hall and DLTS measurements on Al-rich Al0.8Ga0.2As:Te sample show a reversal in the ordering of the energies of the hydrogenic and deep states of the Te donor, with the DX state lying higher than the X valley related effective mass state. Thermal emission properties of the pressure induced DX states of Ge and Se donors in neutron transmutation doped (NTD) GaAs are discussed.

Evidence against the negative-charge-state model for theDXcenter inn-type GaAs

1989 ◽  
Vol 62 (16) ◽  
pp. 1922-1922 ◽  
Author(s):  
D. K. Maude ◽  
L. Eaves ◽  
T. J. Foster ◽  
J. C. Portal
Keyword(s):  
Charge State ◽  
Negative Charge ◽  
State Model

scholarly journals Inkjet-printed graphene Hall mobility measurements and low-frequency noise characterization

Nanoscale ◽  
2020 ◽  
Vol 12 (12) ◽  
pp. 6708-6716 ◽  
Author(s):  
Gabriele Calabrese ◽  
Lorenzo Pimpolari ◽  
Silvia Conti ◽  
Fabrice Mavier ◽  
Subimal Majee ◽  
...  
Keyword(s):  
Low Temperature ◽  
Hall Mobility ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Characterization

Inkjet printed graphene is in-depth investigated by means of Hall mobility measurements, low-temperature magnetoresistance analysis, and low frequency noise characterization.

scholarly journals Low temperature sputter-deposited ZnO films with enhanced Hall mobility using excimer laser post-processing

2017 ◽  
Vol 50 (48) ◽  
pp. 485306 ◽  
Author(s):  
C Tsakonas ◽  
V L Kuznetsov ◽  
W M Cranton ◽  
N Kalfagiannis ◽  
K M Abusabee ◽  
...  
Keyword(s):  
Low Temperature ◽  
Excimer Laser ◽  
Hall Mobility ◽  
Zno Films ◽  
Post Processing ◽  
Sputter Deposited

Mobility enhancement of modulation-doped materials by low-temperature optical annealing of spacer-layer defect charge state

1987 ◽  
Vol 36 (5) ◽  
pp. 2707-2712 ◽  
Author(s):  
R. J. Higgins ◽  
K. P. Martin ◽  
D. A. Syphers ◽  
J. A. Van Vechten ◽  
S. C. Palmateer
Keyword(s):  
Low Temperature ◽  
Charge State ◽  
Spacer Layer ◽  
Doped Materials ◽  
Layer Defect

scholarly journals Profiles of electrophoretic alleles in natural populations

1975 ◽  
Vol 25 (2) ◽  
pp. 137-143 ◽  
Author(s):  
A. H. D. Brown ◽  
D. R. Marshall ◽  
L. Albrecht
Keyword(s):  
Charge State ◽  
Frequency Distribution ◽  
Finite Population ◽  
Natural Populations ◽  
State Model ◽  
Geometric Series ◽  
Effective Number ◽  
Expected Frequency ◽  
Central Moments

SUMMARYThe charge state model of Ohta & Kimura (1973) for the number of electrophoretically detectable alleles in a finite population, is extended to include mutations of both one and two charge changes. The effective number of alleles (ne) is increased only slightly by this extension. Electrophoretic profiles of neutral variants are shown on average to be leptokurtic and have their odd central moments equal to zero. The expected frequency distribution of pairs of gametes which differ by 1,2,3,… charge units can be obtained as the sum of the appropriate terms from two geometric series.

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